Organic electroluminescent device and boric acid and borinic acid derivatives used therein

ABSTRACT

The present invention relates to the use of aromatic boronic acid or borinic acid derivatives in organic electronic devices, in particular electroluminescent devices.

RELATED APPLICATIONS

This application is a national stage application (under 35 U.S.C. §371)of PCT/EP2006/003150, filed Apr. 6, 2006, which claims benefit ofEuropean application 05009643.7, filed May 5, 2005.

In a number of applications of various types which can be ascribed tothe electronics industry in the broadest sense, the use of organicsemiconductors as functional materials has been reality for some time oris expected in the near future. The general structure of organicelectroluminescent devices described, for example, in U.S. Pat. No.4,539,507, U.S. Pat. No. 5,151,629, EP 0676461 and WO 98/27136. However,these devices still exhibit considerable problems requiring urgentimprovement:

-   1. The operating lifetime is still short, in particular in the case    of blue emission, meaning that it has hitherto only been possible to    achieve simple applications commercially.-   2. In some cases, use is made of mixtures of isomeric compounds,    which may have different physical properties (glass transition    temperature, glass formation properties, absorption,    photoluminescence). Since these stereoisomers in some cases also    have different vapour pressures at the processing temperature,    uniform, reproducible production of the organic electronic device is    not possible. This problem is described in detail in unpublished    application EP 04026402.0.-   3. The compounds used are in some cases only sparingly soluble in    common organic solvents, which makes their purification during    synthesis more difficult, but also makes cleaning of the plants more    difficult in the case of the production of the organic electronic    devices.-   4. Many of the compounds used, in particular those which are used as    host materials in fluorescent or phosphorescent devices, are only    accessible in multistep syntheses, and purification of the compound    is also frequently very complex, which represents a significant    disadvantage for use of these compounds.-   5. Many of the materials used do not have adequate thermal stability    or have a very high evaporation temperature, which is associated    with a high thermal load on sensitive equipment parts, such as, for    example, the shadow mask. This applies in particular to stilbenamine    compounds and to ortho-metallated iridium complexes.

The closest prior art can be regarded as the use of various fusedaromatic compounds, in particular anthracene or pyrene derivatives, ashost materials in fluorescent OLEDs, in particular for blue-emittingelectroluminescent devices, for example 9,10-bis(2-naphthyl)anthracene(U.S. Pat. No. 5,935,721). WO 03/095445 and CN 1362464 describe9,10-bis(1-naphthyl)anthracene derivatives for use in OLEDs. Furtheranthracene derivatives which are suitable as host materials aredescribed in WO 01/076323, WO 01/021729, WO 04/013073, WO 04/018588, WO03/087023 or WO 04/018587. Host materials based on aryl-substitutedpyrenes and chrysenes are described in WO 04/016575, which in principlealso encompasses corresponding anthracene and phenanthrene derivatives.Although good results have already been achieved using these compounds,it is necessary, for high-quality applications, to have improved hostmaterials available. In addition, some of these compounds are onlyaccessible in a complex manner in multistep syntheses.

In phosphorescent OLEDs, the matrix material used is frequently4,4′-bis(N-carbazolyl)biphenyl (CBP). The disadvantages are, inter alia,short lifetimes of the devices produced therewith and frequently highoperating voltages, which result in low power efficiencies. Furthermore,it has been found that, for energetic reasons, CBP is unsuitable forblue-emitting electroluminescent devices, which results in poorefficiency. In addition, the structure of the devices is complex if CBPis used as matrix material, since a hole-blocking layer and anelectron-transport layer additionally have to be used. Improved tripletmatrix materials based on keto compounds of spirobifluorene aredescribed in WO 04/093207. However, toxic inorganic cyanides arerequired in the synthesis of the best of the matrix materials describedtherein, meaning that the preparation of these materials is ecologicallyunacceptable.

The electron-transport compound used in organic electroluminescentdevices is usually AlQ₃ (aluminium trishydroxyquinolinate) (U.S. Pat.No. 4,539,507). This has a number of disadvantages: it cannot bevapour-deposited without a residue since it partially decomposes at thesublimation temperature, which represents a major problem, in particularfor production plants. A crucial practical disadvantage is the highhygroscopicity of AlQ₃. For use in OLEDs, AlQ₃ therefore has to bepurified in a complex manner in complicated, multistep sublimationprocesses and subsequently stored and handled in a protective-gasatmosphere with exclusion of water. In addition, AlQ₃ has low electronmobility, which results in higher voltages and thus in lower powerefficiency. In order to avoid short circuits in the display, it isdesired to increase the layer thickness; this is not possible with AlQ₃owing to the low charge-carrier mobility and the resultant increase involtage. Furthermore, the inherent colour of AlQ₃ (yellow as a solid),which can result in colour shifts in the case of blue OLEDs inparticular due to reabsorption and weak re-emission, proves to be veryunfavourable. Blue OLEDs can only be produced here with considerablelosses in efficiency and colour location impairment. A furtherdisadvantage of AlQ₃ is the instability to holes (Z. Popovic et al.,Proceedings of SPIE 1999, 3797, 310-315), which can always result inproblems in the component on long-term use. In spite of the saiddisadvantages, AlQ₃ to date still represents the best compromise for themultifarious requirements of an electron-transport material in OLEDs.

There thus continues to be a demand for improved materials which resultin good efficiencies and at the same time long lifetimes in organicelectronic devices and which give reproducible results during productionand operation of the device and are readily accessible synthetically.

Surprisingly, it has been found that organic electroluminescent deviceswhich comprise aromatic boronic acid or borinic acid derivatives havesignificant improvements over the prior art. These materials enable anincrease in the efficiency and lifetime of the organic electronic devicecompared with materials in accordance with the prior art. Since thesematerials cannot exhibit atropisomerism about the aryl-boron bond, whichresults in diastereomers, reproducible production of the organicelectronic devices is thus possible. Furthermore, these materials havethe advantage over materials in accordance with the prior art that theyare readily accessible using standard methods of organic chemistry andin addition are easy to purify. A particularly surprising observation isthat these materials have a relatively low evaporation temperature, inspite of the relatively high molecular weight. The present inventiontherefore relates to the use of these materials in organic electronicdevices.

The use of boron-nitrogen compounds containing tetrasubstituted boron isdescribed in the literature (for example US 2005/0048311). Thesecompounds carry a negative charge on the boron and a positive charge onthe nitrogen and consequently have completely different electronicproperties to boron-nitrogen compounds in which the boron atom is onlytrisubstituted. The use of boron-nitrogen compounds containingtrisubstituted boron, in particular those which also have a boron-carbonbond, is not evident from the description.

Furthermore, WO 02/052661 and WO 02/051850 describe the use of aromaticboranes, i.e. boron compounds which have three boron-aryl bonds, inOLEDs. JP 2003/031368 describes bisboranes in which two substitutedborane groups are bridged by an aromatic group, with further aromatic oraliphatic groups being bonded to the boron. These materials aredescribed as electron-transport or hole-blocking materials and as hostmaterials. However, boranes generally have the problem of high chemicalreactivity. In particular, these compounds are highly sensitive tooxidation, which makes their synthesis and handling significantly moredifficult. Thus, relatively sterically unhindered boranes decomposewithin only a short time in air (A. Schulz, W. Kaim, Chem. Ber. 1989,122, 1863-1868), and even sterically hindered boranes, such as, forexample, mesityl-substituted boranes, are still so sensitive that theyhave to be handled under a protective gas. This sensitivitysignificantly restricts the potential use of these compounds.

Arylboronic acid and arylborinic acid derivatives do not have theabove-mentioned disadvantages of the boranes or only do so to asignificantly reduced extent. Boronic acid and borinic acid derivativesof this type are key intermediates for Suzuki coupling reactions andhave to date frequently been employed as starting materials orintermediates for the synthesis of organic semiconductors. However,their use as active component in OLEDs is unknown.

The invention relates to the use of aromatic boronic acid or borinicacid derivatives in organic electronic devices.

Use here is taken to mean that the corresponding compounds are employeddirectly as active component in the organic electronic device and not asintermediate for the synthesis of further compounds.

The invention furthermore relates to organic electronic devicescomprising at least one organic layer which comprises at least onearomatic boronic acid or borinic acid derivative.

The term aromatic boronic acid or borinic acid derivative is taken tomean a compound in which the boron atom is bonded directly to anaromatic or heteroaromatic unit. The boron atom is preferably bonded toa carbon atom of the aromatic or heteroaromatic unit and not to anyheteroatom that may be present. For the purposes of this invention, theterm aromatic boronic acid or borinic acid derivative is not taken tomean polymers or oligomers in which the boronic acid or borinic acidderivative is only bonded to the chain ends.

For the purposes of this invention, the boron atom in a boronic acid orborinic acid derivative is trisubstituted. Compounds containingtetrasubstituted boron do not fall under the term boronic acid orborinic acid derivative. The boronic acid or borinic acid derivative ispreferably a cyclic boronic acid anhydride, a cyclic boronic acid imide,a boronic acid ester, a boronic acid amide, a boronic acid amidoester, aboronic acid nitride, a borinic acid anhydride, a borinic acid imide, aborinic acid ester, a borinic acid amide or a borinic acid nitride.Preference is likewise given to the corresponding sulfur analogues.Oligomeric or polymeric boronic acid anhydrides, boronic acid imides,boronic acid esters or corresponding sulfur compounds are also suitableif they are applied from solution; however, they are less suitable ifthey are to be applied by sublimation. The use of free boronic acids orborinic acids in organic electronic devices is unsuitable since theytend towards thermal dehydration with formation of boronic or borinicacid anhydrides with liberation of water. The term boronic acid orborinic acid derivative thus does not encompass the free boronic acid orthe free borinic acid. However, free boronic acids or borinic acids canbe used as starting materials from which the corresponding boronic orborinic acid anhydrides are vapour-deposited in a vapour-depositionprocess. It is likewise possible to use free boronic acids or borinicacids for the production of the device and not convert them into thecorresponding boronic acid or borinic acid derivative until in thedevice, for example by reaction with another compound in the layer. Thegeneral structures of some boronic acid derivatives are shown in scheme1 below, where Ar generally stands for an aromatic ring system and R foran organic radical.

The boronic acid or borinic acid derivative preferably forms glass-likefilms having a glass transition temperature T_(g) of above 70° C.,particularly preferably above 100° C., very particularly preferablyabove 130° C.

The boronic acid or borinic acid derivative furthermore preferably has amolecular weight of at least 250 g/mol, particularly preferably at least300 g/mol, very particularly preferably at least 400 g/mol. Themolecular weight of the boronic acid or borinic acid derivative, if itis to be applied by a vapour-deposition process, is furthermorepreferably less than 5000 g/mol, particularly preferably less than 2000g/mol, very particularly preferably less than 1500 g/mol. This ispreferably a defined compound.

The organic electronic device is preferably selected from the groupconsisting of organic and polymeric light-emitting diodes (OLEDs,PLEDs), organic field-effect transistors (O-FETs), organic thin-filmtransistors (O-TFTs), organic light-emitting transistors (O-LETs),organic integrated circuits (O-ICs), organic solar cells (O-SCs),organic field-quench devices (O-FQDs), light-emitting electrochemicalcells (LECs), organic photoreceptors and organic laser diodes(O-lasers). Particular preference is given to organic and polymericlight-emitting diodes.

The organic electronic device usually comprises anode, cathode and atleast one organic layer which comprises at least one aromatic boronicacid or borinic acid derivative. At least one of the organic layers inorganic electroluminescent devices is an emission layer. The emissionhere can be fluorescence or phosphorescence, or a plurality of differentemitters may also be present in one layer or in a plurality of layers,where some of the emitters exhibit fluorescence and the other emittersexhibit phosphorescence. It may also be preferred for the organicelectronic device to comprise further layers in addition to the anode,cathode and emission layer. These layers may be, for example:hole-injection layer, hole-transport layer, hole-blocking layer,electron-transport layer and/or electron-injection layer. However, itshould be pointed out at this point that each of these layers does notnecessarily have to be present.

Thus, in particular on use of boronic acid or borinic acid derivativesin the emission layer, very good results are furthermore achieved if theorganic electroluminescent device does not comprise a separateelectron-transport layer and/or a separate hole-blocking layer and theemitting layer is directly adjacent to the electron-injection layer orto the cathode. It may likewise be preferred for the organicelectroluminescent device not to comprise a separate hole-transportlayer and for the emitting layer to be directly adjacent to thehole-injection layer or to the anode.

In a preferred embodiment of the invention, the boronic acid or borinicacid derivative is employed in an emission layer. It can be employed asthe pure substance, but is preferably employed as host material incombination with a fluorescent or phosphorescent dopant. In principle,all fluorescent or phosphorescent dopants as described in the literatureand mentioned in greater detail below are suitable for this purpose.

In fluorescent devices, the dopant is preferably selected from the classof the monostyrylamines, distyrylamines, tristyrylamines,tetrastyrylamines and arylamines. The term monostyrylamine is taken tomean a compound which contains a styryl group and at least one amine,which is preferably aromatic. The term distyrylamine is taken to mean acompound which contains two styryl groups and at least one amine, whichis preferably aromatic. The term tristyrylamine is taken to mean acompound which contains three styryl groups and at least one amine,which is preferably aromatic. The term tetrastyrylamine is taken to meana compound which contains four styryl groups and at least one amine,which is preferably aromatic. For the purposes of this invention, theterm arylamine or aromatic amine is taken to mean a compound whichcontains three aromatic or heteroaromatic ring systems bonded directlyto the nitrogen. For the purposes of this invention, the term styrylgroup is taken to mean a substituted or unsubstituted vinyl group whichis bonded directly to an aryl or heteroaryl group. The styryl groups areparticularly preferably stilbenes, which may also be further substitutedon the double bond or on the aromatic rings. Suitable substituents hereare, in particular, the groups R¹ mentioned below. Examples of suchdopants are substituted or unsubstituted tristilbenamines or furtherdopants which are described, for example, in WO 06/000388 and inunpublished patent applications EP 04028407.7 and EP 05001891.0.

The proportion of the boronic acid or borinic acid derivative as host inthe fluorescent mixture of the emission layer here is usually between 1and 99.9% by weight, preferably between 50 and 99.5% by weight,particularly preferably between 80 and 99% by weight, in particularbetween 90 and 99% by weight. Correspondingly, the proportion of thefluorescent dopant is between 0.1 and 99% by weight, preferably between0.5 and 50% by weight, particularly preferably between 1 and 20% byweight, in particular between 1 and 10% by weight.

In phosphorescent devices, the dopant is preferably selected from theclass of the metal complexes containing at least one element having anatomic number of greater than 20, preferably greater than 38 and lessthan 84, particularly preferably greater than 56 and less than 80. Thephosphorescent emitters used are preferably metal complexes whichcontain molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium,iridium, palladium, platinum, silver, gold or europium, in particulariridium or platinum.

The ligands on the metal are preferably monoanionic ligands whichchelate in a bidentate manner. Suitable for this purpose are, inparticular, ligands which form a metal-carbon bond and furthermore acoordinative bond from a donor atom, in particular nitrogen, oxygen orphosphorus, to the metal. The metal complex preferably contains at leastone such ligand, particularly preferably at least two such ligands. Theformation of a metal-carbon and metal-nitrogen bond is preferred here.The two coordinating groups here may be cyclic, for examplephenylpyridine, phenylisoquinoline or derivatives thereof, or they mayalso be acyclic, for example ligands which bond via pyridine and a vinylC atom. It is also possible for further ligands to be present, forexample β-diketonates, etc. In a particularly preferred embodiment ofthe invention, the complex contains only ligands which chelate in abidentate manner and form a metal-carbon bond.

Preferred mixtures comprise, as phosphorescent emitters, at least onecompound of the formulae (A) to (D)

where the following applies to the symbols and indices used:

-   DCy is on each occurrence, identically or differently, a cyclic    group which contains at least one donor atom, preferably nitrogen or    phosphorus, via which the cyclic group is bonded to the metal and    which may in turn carry one or more substituents R¹; the groups DCy    and CCy are bonded to one another via at least one covalent bond;-   CCy is on each occurrence, identically or differently, a cyclic    group which contains a carbon atom via which the cyclic group is    bonded to the metal and which may in turn carry one or more    substituents R¹;-   A is on each occurrence, identically or differently, a monoanionic    ligand which chelates in a bidentate manner, preferably a diketonate    ligand;-   R¹ has the same meaning as mentioned below.

The cyclic groups CCy and DCy may be monocyclic or polycyclic and arepreferably aromatic or heteroaromatic. The groups CCy and DCy arepreferably monocyclic or bicyclic, where the individual rings preferablyhave 5 or 6 ring atoms, for example benzene, pyridine, naphthalene,quinoline or isoquinoline. Furthermore, a plurality of the ligands mayalso be linked via one or more substituents R¹ as bridging unit to forma relatively large polypodal ligand, and/or a bridge, in particularhaving 1, 2 or 3 bridge atoms, may be present between CCy and DCy inaddition to the direct covalent bond.

Particular preference is given to structures of the formulae (B) and (D)which do not contain a further ligand A.

Examples of phosphorescent emitters are revealed by the applications WO00/70655, WO 01/41512, WO 02/02714, WO 02/15645, EP 1191613, EP 1191612,EP 1191614, WO 04/081017, WO 05/033244 and the unpublished applicationsEP 04029182.5 and EP 05002237.5.

The proportion of the boronic acid or borinic acid derivative as host inthe phosphorescent mixture is usually between 1 and 99.9% by weight,preferably between 50 and 99.5% by weight, particularly preferablybetween 70 and 99% by weight, in particular between 80 and 95% byweight. Correspondingly, the proportion of the phosphorescent dopant isbetween 0.1 and 99% by weight, preferably between 0.5 and 50% by weight,particularly preferably between 1 and 30% by weight, in particularbetween 5 and 20% by weight.

Preference is furthermore given to organic electroluminescent deviceswhich are characterised in that a plurality of emitting compounds isused in the same layer or a plurality of emitting layers is present,where at least one of the emitting layers comprises at least one boronicacid or borinic acid derivative. This device particularly preferably hasa plurality of emission maxima between 380 nm and 750 nm, resultingoverall in white emission. The emitting compounds employed here can beboth those which exhibit fluorescence and also those which exhibitphosphorescence. An alternative to the production of white emission isthe use of broad-band emitters.

In a further preferred embodiment of the invention, the boronic acid orborinic acid derivative is employed as electron-transport material asthe pure substance or in a mixture, preferably as the pure substance, inan electron-transport layer in an organic electronic device, inparticular in a fluorescent or phosphorescent organic electroluminescentdevice. The boronic acid or borinic acid derivative here may also bedoped, for example with alkali metals.

In a further preferred embodiment of the invention, the boronic acid orborinic acid derivative is employed as hole-blocking material as thepure substance or in a mixture, preferably as the pure substance, in ahole-blocking layer, in particular in a phosphorescent organicelectroluminescent device.

In a further preferred embodiment of the invention, the boronic acid orborinic acid derivative is employed as hole-transport material as thepure substance or in a mixture, preferably as the pure substance, in ahole-transport layer or in a hole-injection layer in an organicelectronic device, in particular in a fluorescent or phosphorescentorganic electroluminescent device. This is the case, in particular, ifthe boronic acid or borinic acid derivative contains one or moretriarylamine groups. The boronic acid or borinic acid derivative heremay also be doped, as described, for example, in WO 03/070822.

In a further preferred embodiment of the invention, the boronic acid orborinic acid derivative is employed as fluorescent dopant, preferably incombination with a host material, in an emission layer in a fluorescentorganic electroluminescent device. This is the case, in particular, ifthe boronic acid or borinic acid derivative contains one or morestilbene groups, in particular in combination with one or moretriarylamine groups. Suitable host materials here are likewise boronicacid or borinic acid derivatives as already described above. Alsosuitable are other compounds usually used as host materials, preferablyselected from the classes of the oligoarylenes (for example2,2′,7,7′-tetraphenylspirobifluorene in accordance with EP 676461 ordinaphthylanthracene), in particular the oligoarylenes containing fusedaromatic groups, the oligoarylenevinylenes (for example DPVBi orspiro-DPVBi in accordance with EP 676461), the polypodal metal complexes(for example in accordance with WO 04/081017), the hole-conductingcompounds (for example in accordance with WO 04/058911), theelectron-conducting compounds, in particular ketones, phosphine oxides,sulfoxides, etc. (for example in accordance with WO 05/084081 or WO05/084082) or the atropisomers (for example in accordance with theunpublished application EP 04026402.0). Particularly preferred hostmaterials are selected from the classes of the oligoarylenes, containingnaphthalene, anthracene and/or pyrene or atropisomers of thesecompounds, the oligoarylenevinylenes, the ketones, the phosphine oxidesand the sulfoxides. Very particularly preferred host materials areselected from the classes of the oligoarylenes, containing anthraceneand/or pyrene or atropisomers of these compounds, the phosphine oxidesand the sulfoxides. The proportion of the boronic acid or borinic acidderivative as dopant in the mixture is preferably as already describedabove for dopants in fluorescent organic electroluminescent devices.

In a further preferred embodiment of the invention, the boronic acid orborinic acid derivative is employed as phosphorescent dopant, preferablyin combination with a host material, in an emission layer in aphosphorescent organic electroluminescent device. Suitable hostmaterials here are likewise boronic acid or borinic acid derivatives asalready described above. Also suitable are other compounds usually usedas host materials, preferably selected from the classes of the carbazolederivatives, for example 4,4′-bis(N-carbazolyl)biphenyl (CBP), theketones and imines (for example in accordance with WO 04/093207), thephosphine oxides, sulfoxides and sulfones (for example in accordancewith WO 05/003253), the phosphines and sulfides (for example inaccordance with WO 05/053051), the tetraarylsilanes (for example inaccordance with WO 04/095598) or the oligoarylene derivatives. Thephosphorescent dopant according to the invention comprising boronic acidor borinic acid derivatives preferably has the elements and a structureas already described above for phosphorescent emitters, with at leastone boronic acid or borinic acid derivative being bonded to at least oneligand. If the ligand is a derivative of phenylpyridine, phenylquinolineor phenylisoquinoline and the boronic acid derivative is a boronic acidester, this preferably has a cyclic structure. If the boronic acidderivative is a boronic acid ester, this generally preferably has acyclic structure. Further preferred phosphorescent dopants which carryboronic acid or borinic acid derivative groups are metal/carbenecomplexes. Simple metal/carbene complexes as are known for use in OLEDsare described, for example, in WO 05/019373.

It may furthermore be preferred for a boronic acid or borinic acidderivative to be used simultaneously in a plurality of layers and/orfunctions. For example, it can be employed simultaneously both in one ormore emission layers and also in one or more electron-transport layersand/or hole-blocking layers and/or hole-transport layers. The boronicacid or borinic acid derivatives in the different layers may beidentical or different.

Preference is furthermore given to an organic electronic device which ischaracterised in that one or more layers are coated using a sublimationprocess. In this, the materials are vapour-deposited in vacuumsublimation units at a pressure of below 10⁻⁵ mbar, preferably below10⁻⁶ mbar, particularly preferably below 10⁻⁷ mbar.

Preference is likewise given to an organic electronic device which ischaracterised in that one or more layers are coated by means of the OVPD(organic vapour phase deposition) process or with the aid of carrier-gassublimation. The materials are generally applied here at a pressure ofbetween 10⁻⁵ mbar and 1 bar.

Preference is furthermore given to an organic electronic device which ischaracterised in that one or more layers are produced from solution,such as, for example, by spin coating, or by means of any desiredprinting process, such as, for example, screen printing, flexographicprinting or offset printing, but particularly preferably LITI (lightinduced thermal imaging, thermal transfer printing) or ink-jet printing.

In a preferred embodiment of the invention, the boronic acid or borinicacid derivative contains at least one sub-structure of the formula (1)Ar—B¹-E  Formula (1)where the following applies to the symbols used:

-   B¹ stands on each occurrence for a boron atom which is    trisubstituted;-   Ar is on each occurrence, identically or differently, an aromatic or    heteroaromatic ring system having 5 to 40 aromatic ring atoms, which    may be substituted by one or more radicals R¹;-   E is on each occurrence, identically or differently, an oxygen,    sulfur or nitrogen atom, to which a further substituent other than    hydrogen is bonded in the case of oxygen or sulfur and two further    substituents, at least one of which is other than hydrogen, are    bonded in the case of nitrogen;-   R¹ is on each occurrence, identically or differently, F, Cl, Br, I,    CN, a straight-chain alkyl, alkoxy or thioalkoxy chain having 1 to    40 C atoms or a branched or cyclic alkyl, alkoxy or thioalkoxy chain    having 3 to 40 C atoms, each of which may be substituted by R³ and    in which one or more non-adjacent C atoms may be replaced by N—R³,    O, S, CO, O—CO—O, CO—O, —CR³═CR³— or —C≡C— and in which one or more    H atoms may be replaced by F, Cl, Br, I or CN, or an aromatic or    heteroaromatic ring system having 5 to 40 C atoms, which may also be    substituted by one or more radicals R³, or a combination of two,    three or four of these systems; two or more radicals R¹ here may    also form a mono- or polycyclic, aliphatic or aromatic ring system    with one another;-   R³ is on each occurrence, identically or differently, H or an    aliphatic or aromatic hydrocarbon radical having 1 to 20 C atoms.

The sub-structure of the formula (1) encompasses both compounds whichhave precisely one boronic acid or borinic acid derivative bonded to thearomatic ring system and also two or more. Likewise encompassed arecompounds in which a plurality of sub-structures Ar—B′ are bridged by aplurality of groups E, for example by oligoalcohols, oligothiols oroligoamines. In addition, defined low-molecular-weight compounds andoligomeric, dendritic or polymeric compounds are likewise encompassed.Also encompassed are metal complexes in which the group Ar is bonded toone or more metal atoms.

Preferred boronic acid or borinic acid derivatives are selected from thegroup of compounds of the formulae (2) to (8), which are explained ingreater detail below.

The boronic acid or borinic acid derivative preferably has a structureof the formula (2), formula (3) or formula (4)

where Ar, R¹ and R³ have the same meaning as described above, and thefollowing applies to the further symbols and indices:

-   B stands on each occurrence for a boron atom;-   X is on each occurrence, identically or differently, a group OR²,    SR², N(R²)₂, NHR² or OBAr₂;-   Y is on each occurrence, identically or differently, a group Ar or    X;-   Z is on each occurrence, identically or differently, O, S, NR² or    NH;-   L is on each occurrence, identically or differently, an organic    group having 4 to 60 C atoms, to which at least four groups Z are    bonded in such a way that they are able, with the boron atom, to    form a cyclic system;-   R² is on each occurrence, identically or differently, a    straight-chain alkyl chain having 1 to 40 C atoms or a branched or    cyclic alkyl chain having 3 to 40 C atoms, each of which may be    substituted by R³ and in which one or more non-adjacent C atoms may    be replaced by N—R³, O, S, CO, O—CO—O, CO—O, —CR³═COR³— or —C≡C—,    with the proviso that a heteroatom is not bonded directly to the    oxygen or sulfur or nitrogen of the group X or Y, and in which one    or more H atoms may be replaced by F, Cl, Br, I or CN, or an    aromatic or heteroaromatic ring system having 5 to 40 C atoms, which    may also be substituted by one or more radicals R³, or a combination    of two, three or four of these systems; two or more radicals R² here    may also form a mono- or polycyclic, aliphatic or aromatic ring    system with one another;-   n is on each occurrence, identically or differently, 1, 2, 3, 4, 5    or 6;-   m is on each occurrence, identically or differently, 1, 2 or 3;-   q is on each occurrence, identically or differently, 2, 3, 4, 5 or    6.

The boronic acid or borinic acid derivative furthermore preferably has astructure of the formula (5), formula (6), formula (7) or formula (8)

where B, X, Y, Ar, R¹, R² and R³ have the same meaning as describedabove, and furthermore:

-   DCy is on each occurrence, identically or differently, a cyclic    group which contains at least one donor atom, preferably nitrogen or    phosphorus, via which the cyclic group is bonded to the metal and    which may in turn carry one or more substituents R¹; the groups DCy    and CCy are bonded to one another via at least one covalent bond;-   CCy is on each occurrence, identically or differently, a cyclic    group which contains a carbon atom via which the cyclic group is    bonded to the metal and which may in turn carry one or more    substituents R¹;-   A is on each occurrence, identically or differently, a monoanionic    ligand which chelates in a bidentate manner, preferably a diketonate    ligand;-   z is on each occurrence, identically or differently, 0, 1, 2, 3, 4,    5 or 6, with the proviso that at least one z in each complex is    other than 0 and furthermore with the proviso that z cannot adopt a    number which is greater than the maximum number of substitutable    hydrogen atoms on the corresponding ring DCy or CCy.

The cyclic groups CCy and DCy may be monocyclic or polycyclic and arepreferably aromatic or heteroaromatic. Furthermore, a plurality of theligands may also be linked via one or more substituents R¹ as bridgingunit to form a relatively large polypodal ligand, and/or a bridge, inparticular having 1, 2 or 3 direct bridge atoms, may be present betweenCCy and DCy in addition to the direct covalent bond.

Particular preference is given to structures of the formulae (6) and (8)which do not contain a further ligand A.

The formulae (2) and (5) to (8) where X=OR² and Y=OR² represent aboronic acid ester. The formulae (2) and (5) to (8) where X=SR² andY=SR² represent a thioboronic acid ester. The formulae (2) and (5) to(8) where X=OR² and Y=Ar represent a borinic acid ester. The formulae(2) and (5) to (8) where X=SR² and Y=Ar represent a thioborinic acidester. The formulae (2) and (5) to (8) where X=N(R²)₂ or NHR² andY=N(R²)₂ or NHR² represent a boronic acid amide. The formulae (2) and(5) to (8) where X=N(R²)₂ or NHR² and Y=Ar represent a borinic acidamide. The formulae (2) and (5) to (8) where X=OR² and Y=N(R²)₂ or NHR²represent a boronic acid amidoester. The formulae (2) and (5) to (8)where X=SR² and Y=N(R²)₂ or NHR² represent a boronic acidamidothioester. The formulae (2) and (5) to (8) where X=OBAr₂ and Y=Arrepresent a borinic acid anhydride. The formula (3) where Z=O representsa cyclic boronic acid anhydride. The formula (3) where Z=NH or NR²represents a cyclic boronic acid imide. The formula (4) where Z=Orepresents a compound containing a plurality of boronic acid ester unitswhich are bridged via the group L. The formula (4) where Z=NH or NR²represents a compound containing a plurality of boronic acid amide unitswhich are bridged via the group L. The formula (4) where Z=S representsa compound containing a plurality of thioboronic acid ester units whichare bridged via the group L. Mixed forms are likewise permissible here,for example where some of the groups Z=O and other groups Z=NH, NR² orS.

Although evident from the description, it should again be emphasisedhere that a plurality of radicals R¹ can form a ring system with oneanother and/or that a plurality of radicals R² can form a ring systemwith one another. In this connection, the term “aromatic ring system” isalso intended to encompass heteroaromatic ring systems. It is preferredfor a plurality of radicals R² to form an aliphatic or aromatic ringsystem with one another.

For the purposes of this invention, an aromatic ring system contains 6to 60 C atoms in the ring system. For the purposes of this invention, aheteroaromatic ring system contains 2 to 60 C atoms and at least oneheteroatom in the ring system, with the proviso that the total number ofC atoms and heteroatoms is at least 5. The heteroatoms are preferablyselected from N, O and/or S. These ring systems may be substituted byR¹. For the purposes of this invention, an aromatic or heteroaromaticring system is taken to mean a system which does not necessarily containonly aryl or heteroaryl groups, but in which a plurality of aryl orheteroaryl groups may also be interrupted by a short, non-aromatic unit(preferably less than 10% of the atoms other than H, particularlypreferably less than 5% of the atoms other than H), such as, forexample, an sp³-hybridised C, N or O atom. A plurality of aryl orheteroaryl groups may likewise be interrupted by vinyl groups oracetylene groups. A plurality of aryl or heteroaryl groups mayfurthermore be interrupted by carbonyl groups, phosphine oxide groups,etc. Thus, for example, aromatic ring systems for the purposes of thisinvention are also taken to mean systems such as 9,9′-spirobifluorene,9,9-diarylfluorene, triarylamine, diary ether, stilbene, tolan, etc. Thearomatic or heteroaromatic ring system or a part thereof may also be afused group here in the sense of the following definition.

For the purposes of this invention, a fused aryl or heteroaryl group istaken to mean a ring system having 9 to 40 aromatic ring atoms in whichat least two aromatic or heteroaromatic rings are fused to one another,i.e. have at least one common edge and a common aromatic n-electronsystem. These ring systems may be substituted by R¹ or unsubstituted.Examples of fused aromatic or heteroaromatic ring systems arenaphthalene, quinoline, isoquinoline, quinoxaline, anthracene, acridine,phenanthrene, phenanthroline, pyrene, naphthacene, perylene, chrysene,etc., while biphenyl, for example, is not a fused aryl group since thereis no common edge between the two ring systems therein. Fluorene orspirobifluorene is likewise not a fused aromatic ring system since thephenyl units therein do not form a common aromatic electron system.

For the purposes of the present invention, a C₁- to C₄₀-alkyl group, inwhich individual H atoms or CH₂ groups may also be substituted by theabove-mentioned groups, is particularly preferably taken to mean theradicals methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl,t-butyl, 2-methylbutyl, n-pentyl, s-pentyl, cyclopentyl, n-hexyl,cyclohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl,trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, ethenyl,propenyl, butenyl, pentenyl, cyclopentenyl, hexenyl, cyclohexenyl,heptenyl, cycloheptenyl, octenyl, cyclooctenyl, ethynyl, propynyl,butynyl, pentynyl, hexynyl or octynyl. A C₁- to C₄₀-alkoxy group isparticularly preferably taken to mean methoxy, ethoxy, n-propoxy,i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy or 2-methylbutoxy. Anaromatic ring system having 6 to 60 C atoms or a heteroaromatic ringsystem having 2 to 60 C atoms, which may also in each case besubstituted by the above-mentioned radicals R¹ and which may be linkedto the aromatic or heteroaromatic ring via any desired positions, is inparticular taken to mean groups derived from benzene, naphthalene,anthracene, phenanthrene, pyrene, chrysene, perylene, fluoranthene,naphthacene, pentacene, benzopyrene, biphenyl, biphenylene, terphenyl,terphenylene, fluorene, spirobifluorene, diphenyl ether, triphenylamine,dihydrophenanthrene, dihydropyrene, tetrahydropyrene, cis- ortrans-indenofluorene, furan, benzofuran, isobenzofuran, dibenzofuran,thiophene, benzothiophene, isobenzothiophene, dibenzothiophene, pyrrole,indole, isoindole, carbazole, pyridine, quinoline, isoquinoline,acridine, phenanthridine, benzo-5,6-quinoline, benzo-6,7-quinoline,benzo-7,8-quinoline, phenothiazine, phenoxazine, pyrazole, indazole,imidazole, benzimidazole, naphthimidazole, phenanthrimidazole,pyridimidazole, pyrazinimidazole, quinoxalinimidazole, oxazole,benzoxazole, naphthoxazole, anthroxazole, phenanthroxazole, isoxazole,1,2-thiazole, 1,3-thiazole, benzothiazole, pyridazine, benzopyridazine,pyrimidine, benzopyrimidine, quinoxaline, 1,5-diazaanthracene,2,7-diazapyrene, 2,3-diazapyrene, 1,6-diazapyrene, 1,8-diazapyrene,4,5-diazapyrene, 4,5,9,10-tetraazaperylene, pyrazine, phenazine,phenoxazine, phenothiazine, fluorubin, naphthyridine, azacarbazole,benzocarboline, phenanthroline, 1,2,3-triazole, 1,2,4-triazole,benzotriazole, 1,2,3-oxadiazole, 1,2,4-oxadiazole, 1,2,5-oxadiazole,1,3,4-oxadiazole, 1,2,3-thiadiazole, 1,2,4-thiadiazole,1,2,5-thiadiazole, 1,3,4-thiadiazole, 1,3,5-triazine, 1,2,4-triazine,1,2,3-triazine, tetrazole, 1,2,4,5-tetrazine, 1,2,3,4-tetrazine,1,2,3,5-tetrazine, purine, pteridine, indolizine or benzothiadiazole.

In a preferred embodiment of the invention, the symbol X stands for OR²or OBAr₂. The compounds of the formulae (2) and (5) to (8) thuspreferably stand for a boronic acid ester or for a borinic acid ester orfor a borinic acid anhydride. In a particularly preferred embodiment ofthe invention, the symbol X stands for OR². In a very particularlypreferred embodiment of the invention, the symbol X stands for OR² andthe symbol Y simultaneously stands for OR². The compounds of theformulae (2) and (5) to (8) thus very particularly preferably stand fora boronic acid ester. It is very particularly preferred here for the tworadicals R² of the groups OR² to form an aliphatic or aromatic ringsystem with one another. This means that the boronic acid ester isformed by an aliphatic or aromatic diol. The cyclic system which formshere is preferably a five-membered ring (1,3,2-dioxaborolane) or asix-membered ring (1,3,2-dioxaborinane), i.e. the cyclic boronic acidester is preferably formed by a 1,2-diol or by a 1,3-diol.

In a further preferred embodiment of the invention, the symbols X and Y,identically or differently on each occurrence, stand for NHR² or N(R²)₂,particularly preferably for N(R²)₂. The compounds of the formulae (2)and (5) to (8) thus preferably stand for a boronic acid amide. It isvery particularly preferred here for two radicals R² of the groupsN(R²)₂ on different N atoms to form an aliphatic or aromatic ring systemwith one another. This means that the boronic acid ester is formed by analiphatic or aromatic diamine. The cyclic system which forms here ispreferably a five-membered ring (1,3,2-diazaborolane) or a six-memberedring (1,3,2-diazaborinane), i.e. the cyclic boronic acid amide ispreferably formed by a 1,2-diamine or by a 1,3-diamine.

In a further preferred embodiment of the invention, the symbol Z in theformula (3) stands for O. The compound of the formula (3) thuspreferably stands for a cyclic boronic acid anhydride. m here isparticularly preferably 1 or 2, very particularly preferably 2.

In a further preferred embodiment of the invention, the symbol Z in theformula (4), identically or differently on each occurrence, stands for Oor for NR², particularly preferably all Z stand for O or for NR². Thecompound of the formula (4) thus particularly preferably stands for anoligoboronic acid ester in which a plurality of boronic acid esters arelinked via the group L, or for an oligoboronic acid amide in which aplurality of boronic acid amides are linked via the group L. q here isparticularly preferably 2, 3 or 4, very particularly preferably q=2 or3. Suitable as linking group L are both straight-chain, branched orcyclic aliphatic compounds and also aromatic compounds. In principle,all aliphatic oligoalcohols and oligoamines are suitable for thesynthesis. Preference is given to those which are readily accessiblesynthetically or are naturally available. A preferred aliphatic alcoholis pentaerythritol. Further preferred aliphatic compounds are sugaralcohols, which are reacted with the corresponding free boronic acids togive the oligoboronic acid esters. These may be straight-chain (forexample mannitol) or cyclic (for example cis-, epi-, allo-, myo-, neo-,muco-, chiro- or scyllo-inositol). In principle, preference is given toall naturally occurring sugar alcohols. Preference is furthermore givento monosaccharides, oligosaccharides or polysaccharides, likewise cyclicsugars, such as, for example, α-, β- or γ-cyclodextrins. In the case ofaromatic compounds, all aromatic rings which are substituted by four ormore hydroxyl groups and/or amino groups are in principle suitable. Thehydroxyl groups here may be bonded to one or more aryl groups linked toone another. Preferred units here are 1,2,3,4-tetrahydroxybenzene,1,2,4,5-tetrahydroxybenzene, 1,2,3,4,5,6-hexahydroxybenzene,4,5,9,10-tetrahydroxytetrahydropyrene, 1,4,5,8-tetrahydroxynaphthalene,2,2′,3,3′-tetrahydroxy-1,1′-biphenyl,3,3′,4,4′-tetrahydroxy-1,1′-biphenyl,2,3,6,7-tetrahydroxyspirobifluorene, etc.

Preferred radicals R¹ are, if present, identically or differently oneach occurrence, F, a straight-chain alkyl or alkoxy chain having 1 to10 C atoms or a branched alkyl or alkoxy chain having 3 to 10 C atoms,each of which may be substituted by R³ and in which one or morenon-adjacent C atoms may be replaced by N—R³, O, S, —CR³═CR³— or —C≡C—and in which one or more H atoms may be replaced by F or CN, or anaromatic or heteroaromatic ring system having 5 to 16 aromatic ringatoms, which may also be substituted by one or more radicals R³, or acombination of two or three of these systems; two or more radicals R¹here may also form a mono- or polycyclic, aliphatic or aromatic ringsystem with one another. Particularly preferred radicals R¹ are, ifpresent, identically or differently on each occurrence, F, astraight-chain alkyl chain having 1 to 5 C atoms or a branched alkylchain having 3 to 5 C atoms, in which, in addition, one or morenon-adjacent C atoms may be replaced by —CR³═CR³— or —C≡C— and in whichone or more H atoms may be replaced by F, or an aryl or heteroaryl grouphaving 5 to 10 aromatic ring atoms, which may also be substituted by oneor more radicals R³, or a combination of two of these systems; two ormore radicals R¹ here may also form a mono- or polycyclic, aliphatic oraromatic ring system with one another.

Preferred radicals R² are, identically or differently on eachoccurrence, a straight-chain alkyl chain having 1 to 10 C atoms or abranched or cyclic alkyl chain having 3 to 10 C atoms, each of which maybe substituted by R³ and in which one or more non-adjacent C atoms maybe replaced by N—R³, O, S, —CR³═CR³— or —C≡C—, with the proviso that aheteroatom is not bonded directly to the oxygen or sulfur or nitrogen ofthe group X or Y, and in which one or more H atoms may be replaced by F,or an aromatic or heteroaromatic ring system having 5 to 16 aromaticring atoms, which may also be substituted by one or more radicals R³, ora combination of two or three of these systems; two or more radicals R²here may also form a mono- or polycyclic, aliphatic or aromatic ringsystem with one another. In a particularly preferred embodiment of theinvention, two radicals R², together with B, X and Y, form a ringsystem, where the formation of a five-, six- or seven-membered ring, inparticular a five- or six-membered ring, is particularly preferred. Veryparticularly preferred groups R² in the formation of ring systems are1,2-ethylene, 1,3-propylene, 1,2-phenylene and 1,8-naphthylene, each ofwhich may also be substituted by one or more radicals R³. It isfurthermore preferred for the radicals R² to form a ring system with R¹.

The preferred groups Ar in the formulae (2) to (4) depend on therespective intended use of the boronic acid or borinic acid derivativesin the organic electronic device. In particular, they differ dependingon whether the compound is used as host for fluorescent or forphosphorescent emitters. The preferred host materials are equallysuitable as electron-transport materials. Different groups Ar arelikewise preferred if the boronic acid or borinic acid derivative is tobe employed as hole-transport compound or as fluorescent orphosphorescent dopant.

For use as host material for fluorescent emitters and aselectron-transport material, the aromatic ring system Ar in a preferredembodiment contains at least one fused aryl or heteroaryl group. Theboron atom is preferably bonded directly to this fused aryl orheteroaryl group. It may be preferred here for further aromatic radicalsto be bonded to the fused aryl or heteroaryl group. It may likewise bepreferred for more than one boron atom to be bonded to the fused aryl orheteroaryl group or for a plurality of fused aryl or heteroaryl groupsto each of which one or more boronic acid or borinic acid derivativesare bonded to be bonded to one another. It is furthermore preferred, inparticular for blue-emitting devices, for the host material to containno double bonds, i.e. no stilbene structures, etc.

The fused aryl or heteroaryl group particularly preferably contains two,three, four or five aromatic or heteroaromatic units, which are in eachcase fused to one another via one or more common edges and thus form acommon aromatic system and which may be substituted by R¹ orunsubstituted. The substitution by R¹ may be appropriate in order toadjust the electronic properties or also in order to obtain compoundswith better solubility. The fused aryl or heteroaryl group veryparticularly preferably contains three or four aromatic orheteroaromatic units, which are in each case fused to one another viaone or more common edges and thus form a common aromatic system andwhich may be substituted by R¹ or unsubstituted. The aromatic andheteroaromatic units fused to one another are very particularlypreferably selected from benzene, pyridine, pyrimidine, pyrazine andpyridazine, each of which may be substituted by R¹ or unsubstituted, inparticular benzene and pyridine, each of which may be substituted by R¹or unsubstituted.

The fused aryl or heteroaryl groups are particularly preferably selectedfrom the group consisting of anthracene, acridine, phenanthrene,phenanthroline, pyrene, naphthacene, chrysene, pentacene and perylene,each of which may optionally be substituted by R¹. The fused aromaticring systems are particularly preferably selected from the groupconsisting of anthracene, phenanthrene, pyrene and naphthacene, inparticular anthracene, phenanthrene and pyrene, each of which mayoptionally be substituted by R¹. R² is very particularly preferably abridging group between X and Y, selected from 1,2-phenylene,1,8-naphthylene, 1,2-ethylene and 1,3-propylene. A plurality of groupsR² on different boronic acid derivatives in the same compound mayfurthermore preferably also form a ring system and thus produce, forexample, an ansa compound.

For clarity, the numbering of anthracene, phenanthrene, pyrene andperylene is shown below:

The boronic acid or borinic acid derivative is preferably linked toanthracene here via the 2- or 9-position if only one such group ispresent, in particular via the 9-position. The 10-position is thenparticularly preferably further substituted by an aromatic substituent.The boronic acid or borinic acid derivatives are preferably linked toanthracene via the 2,9-position, the 2,10-position, the 9,10-position orthe 2,6-position if two such groups are present, particularly preferablyvia the 9,10-position.

The boronic acid or borinic acid derivative is preferably linked topyrene via the 1- or 2-position if only one such group is present. Theboronic acid or borinic acid derivatives are preferably linked to pyrenevia the 1,6-, the 1,8-, the 1,3- or the 2,7-position if two such groupsare present, particularly preferably via the 1,6- or via the2,7-position. The boronic acid or borinic acid derivatives arepreferably linked to pyrene via the 1,3,6,8-position if four such groupsare present.

The boronic acid or borinic acid derivative is preferably linked tophenanthrene via the 2-, the 3- or the 9-position if only one such groupis present. The boronic acid or borinic acid derivatives are preferablylinked to phenanthrene via the 2,7-, the 3,6-, the 2,9-, the 2,10- orthe 9,10-position if two such groups are present, particularlypreferably via the 2,7- or via the 3,6-position.

The boronic acid or borinic acid derivative is preferably linked toperylene via the 3-position if only one such group is present. Theboronic acid or borinic acid derivatives are preferably linked toperylene via the 3,4-, the 3,9- or the 3,10-position if two such groupsare present, particularly preferably via the 3,9- or via the3,10-position. The boronic acid or borinic acid derivatives arepreferably linked to perylene via the 3,4,9,10-position if four suchgroups are present.

For use as host material for phosphorescent emitters and aselectron-transport material, the aromatic ring system Ar in a preferredembodiment contains only aryl or heteroaryl groups having 5 to 14aromatic ring atoms, but none having more than 14 aromatic ring atoms.This does not exclude that a plurality of such groups may be present inthe aromatic ring system Ar, but excludes fused aryl or heteroarylgroups having more than 14 aromatic ring atoms. It may be preferred herefor more than one boron atom to be bonded to the aromatic orheteroaromatic ring system. It is furthermore preferred for the hostmaterial to contain no double bonds, i.e. no stilbene structures, etc.In a particularly preferred embodiment, the aromatic ring system Arcontains only aryl or heteroaryl groups which contain not more than 10aromatic ring atoms, in particular selected from benzene, naphthalene,pyridine, pyrimidine, pyrazine, pyridazine, quinoline, isoquinoline,quinoxaline, triazine, thiophene, benzothiophene, pyrrole, indole,furan, pyrazole, imidazole, triazole and oxadiazole, which may besubstituted by R¹. In particular for use as host material forphosphorescent emitters and as electron-transport material, it is alsopreferred for a plurality of aryl groups to be interrupted by anon-conjugated unit, particularly preferably by a carbonyl group, anaromatic phosphine group, an aromatic phosphine oxide group, a thiogroup, a sulfoxide, a sulfone or a C(R¹)₂ group, in particular acarbonyl group or an aromatic phosphine oxide group.

Particularly preferred groups Ar contain benzene, 2-biphenyl,3-biphenyl, 4-biphenyl, fluorene, dihydrophenanthrene, spirobifluorene,terphenyl, naphthyl or binaphthyl. These may each be substituted by R¹or unsubstituted and may have one or more bonded boronic acid or borinicacid derivatives.

For use as hole-transport material for fluorescent or phosphorescentorganic electroluminescent devices or for other organic electronicdevices, it is preferred for the group Ar to contain at least onetriarylamine unit and/or at least one thiophene derivative. The groupparticularly preferably contains at least one triarylamine unit. Thismay be structures having precisely one or having a plurality of nitrogenatoms, for example triphenylamine, naphthyldiphenylamine, TAD, NPB,NaphDATA, etc.

For use as fluorescent dopant for organic electroluminescent devices, itis preferred for the group Ar to contain at least one stilbene unitand/or at least one tolan unit, particularly preferably at least onestilbene unit. In addition to the stilbene unit, the group Ar veryparticularly preferably contains at least one triarylamine unit.

Examples of boronic acid or borinic acid derivatives which are suitableas host materials for fluorescent or phosphorescent devices, aselectron-transport materials, as hole-transport materials or as emittersare the structures (1) to (198) shown below. Which of the compoundsshown is particularly suitable for fluorescent devices and which forphosphorescent devices, or which is also suitable for other uses, isrevealed by the above description.

Aromatic boronic acid or borinic acid derivatives and the synthesisthereof are known, in particular, as intermediates for Suzuki couplingreactions. They can be synthesised readily by standard methods oforganic chemistry: the synthesis is usually carried out from an aromatichalide, which is converted into an organolithium compound or a Grignardcompound, followed by reaction with a trialkyl borate, usually trimethylborate. The preparation can also be carried out by a one-pot process, inwhich the aromatic halide is reacted with a reactive metal (Li, Mg,etc.) or an organolithium compound in the presence of the alkyl borate(K.-T. Wong et al., J. Org. Chem. 2002, 67, 1041-1044). The boronic acidobtained by hydrolysis can either be converted into the boronic acidanhydride by dehydration, into the corresponding boronic acid ester byreaction with an alcohol with water separation or into the correspondingboronic acid amide by reaction with an amine. Reaction with a diol givesa cyclic boronic acid ester, while reaction with a diamine results incyclic boronic acid amides (G. Kaupp et al., Chem. Eur. J. 2003, 9,4156-4160). Correspondingly, reaction with thiols results in thioboronicacid esters and reaction with dithiols results in cyclic thioboronicacid esters. The alcohols, thiols and amines here may be aromatic oraliphatic. Reaction with aromatic or aliphatic amino alcohols is alsopossible and results in cyclic boronic acid amidoesters, likewise withaminothiols. Aromatic boronic acid derivatives can furthermore also beobtained by reaction of an aromatic halide with a compound whichcontains a boron-boron bond (for example bispinacolatodiborane) withpalladium catalysis (JP 2004/189705; T. Ishiyama et al., SpecialPublication—Royal Society of Chemistry 1997, 201 (Advances in BoronChemistry), 92-95). Another possible synthesis is reaction of thelithiated aromatic compound with chlorocatecholborane derivatives, whichresults directly in the boronic acid ester (M. Yamashita et al., Angew.Chem. Int. Ed. 2000, 39, 4055-4058). Cyclooligomerisation ofborylacetylenes is also described in the literature (A. Goswami et al.,Eur. J. Inorg. Chem. 2004, 2635-2645). The borinic acid derivatives canbe synthesised analogously to the boronic acid derivatives, with thedifference that the stoichiometric ratios between aryl compound andboron compound are selected correspondingly. The compounds are alreadyformed in high purity in the synthesis and can be purified further bystandard methods of organic chemistry, in particular byrecrystallisation. Due to their high thermal stability, they can also bepurified by sublimation without problems. This is of major importancefor use in OLEDs, since sublimed compounds are usually employed for thispurpose and the compounds are frequently applied by vapour deposition.

The aromatic halide employed as starting compound can either be acommercially available halide, for example an aryl bromide or aryldibromide. It is furthermore possible first to build up more complexaromatic systems which contain, for example, a plurality of aryl groups.A standard reaction for this purpose is the Suzuki aryl-aryl couplingwith palladium catalysis, the Hartwig-Buchwald aryl-N coupling withpalladium catalysis or other transition metal-catalysed couplingreactions. In a next step, one of the aromatic rings can be halogenated,for example by bromination using bromine or NBS.

The invention furthermore relates to the use of oligomers, polymers ordendrimers containing aromatic boronic acid or borinic acid derivativesin organic electronic devices, in particular in organicelectroluminescent devices, with the proviso that the boronic acid orborinic acid derivative in oligomers or polymers is not bonded to thechain ends of the oligomer or polymer or not only as end group.

The invention furthermore relates to organic electronic devices, inparticular organic electroluminescent devices, comprising at least oneoligomer, polymer or dendrimer which contains at least one boronic acidor borinic acid derivative, with the proviso that the boronic acid orborinic acid derivative in oligomers or polymers is bonded to at leastone point within the main chain and/or side chain and is not bonded tothe chain ends of the oligomer or polymer or not only as end group.

The polymers can be conjugated, partially conjugated or non-conjugatedpolymers. The boronic acid or borinic acid derivatives can be bondedinto the main chain and/or into the side chain of the polymer. Polymersused in organic electronic devices are usually conjugated or partiallyconjugated polymers containing aromatic recurring units. In general,these polymers are synthesised by palladium-catalysed couplingreactions, in particular Suzuki coupling between an aromatic halide andan aromatic boronic acid or an aromatic boronic acid derivative. If thereaction has not taken place completely or end capping has not beencarried out, it may be that boronic acids or boronic acid derivativesagain remain in the polymer as end group and are also present in theorganic electronic device. For the purposes of this invention, polymericand oligomeric boronic acid or borinic acid derivatives do not encompasspolymers which contain the boronic acid or borinic acid derivativebonded to the chain ends of the polymer or oligomer only as end group,since these groups only remain there as impurity from an incompletereaction. For the purposes of this invention, polymers according to theinvention are those which do not contain the boronic acid or borinicacid derivative bonded to a chain end of the polymer or not only as endgroup, but instead at least at one further point in the polymer whichdoes not represent an end group. This applies equally to oligomers. Theminimum boron content in the polymer here is preferably at least 5 ppm,particularly preferably at least 10 ppm, very particularly preferably atleast 100 ppm.

A preferred embodiment of the invention involves conjugated or partiallyconjugated polymers which contain the boronic acid or borinic acidderivative bonded in a side chain of the polymer.

A further preferred embodiment of the invention involves non-conjugatedpolymers which contain the boronic acid or borinic acid derivativebonded in a side chain of the polymer. In a particularly preferredembodiment, the non-conjugated polymer framework is a derivative ofoligomeric or polymeric sugars, for example amylose or amylopectin.

A further preferred embodiment of the invention involves partiallyconjugated or non-conjugated polymers which comprise the boronic acid orborinic acid derivative in the main chain of the polymer.

Preferred recurring units of the conjugated, partially conjugated ornon-conjugated polymer or oligomer are selected from fluorenes (forexample in accordance with EP 842208 or WO 00/22026), spirobifluorenes(for example in accordance with EP 707020, EP 894107 or EP 04028865.6),phenylenes (for example in accordance with WO 92/18552), carbazoles (forexample in accordance with WO 04/070772 and WO 04/113468), thiophenes(for example in accordance with EP 1028136), dihydrophenanthrenes (forexample in accordance with WO 05/014689), indenofluorenes (for examplein accordance with WO 04/041901 and WO 04/113412), phenanthrenes (forexample in accordance with WO 05/104264), aromatic ketones (for examplein accordance with WO 05/040302) or also from a plurality of theseunits. Phosphorescent metal complexes may also represent recurring unitsof the polymer (for example in accordance with WO 02/068435 or WO06/003000.

The Suzuki coupling that is usually used or also the Yamamoto couplingthat is occasionally used (coupling of two aromatic halides) is notsuitable as synthetic method if the polymer is intended to comprisearomatic boronic acid or borinic acid derivatives and if these units arealready present in the monomers since these groups react under the usualpolycondensation conditions. The synthesis of such polymers can thus notbe carried out under the standard conditions as are generally frequentlyused for conjugated or partially conjugated polymers. For the synthesisof non-conjugated polymers, standard syntheses can be used, for examplethe polymerisation of vinylic double bonds which contain the boronicacid or borinic acid derivatives in the side group. A further possiblesynthesis is the synthesis by standard methods of a conjugated orpartially conjugated polymer which contains unprotected or preferablyprotected alcohol, thiol or amino groups in the side chain. Itpreferably contains protected alcohol groups, particularly preferablyprotected diols. After deprotection, these can be reacted with a boronicacid in a polymer-analogous reaction to give the corresponding boronicacid derivative. Still a further synthetic method which results in theproduction of unconjugated or partially conjugated polymers is thereaction of an aliphatic or aromatic bis(diol), bis(dithiol) orbis(diamine) with an aromatic bisboronic acid in a polycondensationreaction, as shown in scheme 1a, or the reaction of an aromatic compoundcontaining both two hydroxyl, thiol or amino groups and also a boronicacid group, as shown in scheme 1b:

where B, Ar, L and Z have the same meaning as described above, and o oneach occurrence, identically or differently, can adopt an integerbetween 3 and 10,000, preferably between 10 and 1000.

A corresponding reaction is possible using oligoboronic acids and/oroligoalcohols or oligoamines and results in dendrimers or in branchedpolymer structures.

The process according to scheme 1 is novel and is therefore likewise asubject-matter of the present invention.

It has been found that the compounds of the formulae (9) to (33) arevaluable intermediates for carrying out the use according to theinvention. These boronic acid and borinic acid derivatives are novel andare therefore also a subject-matter of the present invention.

The invention therefore relates to compounds of the formulae (9) and(9a)

where the anthracene or acridine framework may also be substituted bysubstituents R¹ and where B, X, Y and R¹ have the same meaning asdescribed above, and furthermore:

-   G is on each occurrence, identically or differently, C—H, C—R¹,    C—BXY or N;-   v is on each occurrence 0 or 1;    with the exception of the following compounds:

In a preferred embodiment of the formula (9), G stands for C—BXY or forC—R¹. G particularly preferably stands for C—R¹, where R¹ stands for anaromatic or heteroaromatic ring system. The anthracene framework isfurthermore preferably unsubstituted apart from in the 9- and10-positions.

In a preferred embodiment of the formula (9a), G stands for C—R¹. R¹here particularly preferably stands for an aromatic or heteroaromaticring system.

The invention furthermore relates to compounds of the formulae (10) and(11)

where the pyrene framework may also be substituted by substituents R¹and where B, X, Y and R¹ have the same meaning as described above, andfurthermore:

-   J is on each occurrence, identically or differently, C—H, C—R¹ or    C—BXY;    with the exception of the following compounds:

The invention furthermore relates to compounds of the formulae (12) to(17)

where the phenanthrene or phenanthroline framework may also besubstituted by substituents R¹ and where B, X, Y, J and R¹ have the samemeaning as described above;with the exception of the following compound:

The invention furthermore relates to compounds of the formula (18)

where the perylene framework may also be substituted by substituents R¹and B, X, Y, J and R¹ have the same meaning as described above.

The invention furthermore relates to compounds of the formulae (19) to(23)

where the naphthalene, quinoline, isoquinoline or quinoxaline frameworkmay also be substituted by substituents R¹ and B, X, Y, J and R¹ havethe same meaning as described above, and Ar¹ represents an aryl orheteroaryl group having 5 to 40 aromatic ring atoms, which may also besubstituted by R¹.

The invention furthermore relates to compounds of the formulae (24) and(25)

where the fluorene or spirobifluorene system may also be substituted bysubstituents R¹ and B, X, Y, J and R¹ have the same meaning as describedabove, with the proviso that for X=OR² and Y=OR², the two radicals R²form an aromatic ring system with one another.

The compound of the formula (24) is preferably substituted in the9,9-position by two substituents R¹ and is otherwise unsubstituted. Thecompound of the formula (25) is preferably unsubstituted or only carriessubstituents in one or more of positions 2, 7, 2′ and 7′.

The invention furthermore relates to compounds of the formula (26)

where B, X, Y, Ar¹ and R¹ have the same meaning as described above.

The invention furthermore relates to compounds of the formula (27) and(27a)

where B, X, Y, Ar and R¹ have the same meaning as described above andfurthermore:

-   Ar² is on each occurrence, identically or differently, a fused aryl    or heteroaryl group having 9 to 20 aromatic ring atoms, which may be    substituted by R¹;-   Ar³ is on each occurrence, identically or differently, a fluorene or    spirobifluorene group, which may be substituted by R¹;-   Q is on each occurrence, identically or differently, a divalent unit    selected from Ar, O, S, SO, SO₂, Se, SeO, SeO₂, Te, TeO, TeO₂, NAr,    PAr, P(═O)Ar, AsAr, As(═O)Ar, SbAr, Sb(═O)Ar, C(R¹)₂, C═O, Si(R¹)₂    and O-BAr—O;-   p is on each occurrence, identically or differently, 1, 2, 3, 4, 5    or 6;-   v is on each occurrence, identically or differently, 0 or 1;-   t is 1, 2, 3, 4 or 5;    with the proviso that Ar² in the formula (27) is not naphthyl on    each occurrence if all p=1 and at the same time v=0 and t=1.

Ar² is preferably on each occurrence, identically or differently, afused aryl or heteroaryl group having 9 to 20 C atoms, particularlypreferably a fused aryl group having 10 to 16 C atoms.

p is furthermore preferably 2, 3, 4 or 5, particularly preferably 2, 3or 4, very particularly preferably 2 or 3.

The invention furthermore relates to compounds of the formula (28)

where B, X, Y, Ar¹ and R¹ have the same meaning as described above, andfurthermore:

-   v is on each occurrence, identically or differently, 0 or 1;-   w is on each occurrence, identically or differently, 1, 2, 3, 4, 5    or 6;    with the proviso that boronic acid esters formed with pinacol,    1,2-ethanediol, 2,2-dimethyl-1,3-propanediol, 2,3-butanediol and    isopropanol are excluded from the invention.

The invention furthermore relates to compounds of the formulae (29),(29a) and (29b)

where B, X, Y, Ar, R¹, R² and v have the same meaning as describedabove, and where a on each occurrence, identically or differently,stands for 1, 2 or 3, with the proviso that structures of the formula(29) are not boronic acid esters of pinacol, glycol and/or1,3-propanediol.

The symbol Ar or Ar¹ here preferably stands for a group which is derivedfrom benzene, biphenyl or naphthalene, each of which may be substitutedby R¹ or unsubstituted.

The invention furthermore relates to compounds of the formula (30),formula (31), formula (32) or formula (33)

where B, X, Y, Z, Ar, R¹, R² and R³ have the same meaning as describedabove, and furthermore:

-   DCy is on each occurrence, identically or differently, a cyclic    group which contains at least one donor atom, preferably nitrogen or    phosphorus, via which the cyclic group is bonded to the metal and    which may in turn carry one or more substituents R¹; the groups DCy    and CCy are bonded to one another via at least one covalent bond;-   CCy is on each occurrence, identically or differently, a cyclic    group which contains a carbon atom via which the cyclic group is    bonded to the metal and which may in turn carry one or more    substituents R¹;-   A is on each occurrence, identically or differently, a monoanionic    ligand which chelates in a bidentate manner, preferably a diketonate    ligand;-   z is on each occurrence, identically or differently, 0, 1, 2, 3, 4,    5 or 6, with the proviso that at least one z in each complex is    other than 0 and furthermore with the proviso that z cannot adopt a    number which is greater than the maximum number of substitutable    hydrogen atoms on the corresponding ring DCy or CCy.

In a preferred embodiment of the invention, the group DCy is amonocyclic group having 5 or 6 aromatic ring atoms or a fused grouphaving 9 or 10 aromatic ring atoms, particularly preferably selectedfrom pyridine, pyrimidine, pyridazine, pyrazine, triazine, quinoline,isoquinoline, quinoxaline and benzopyrimidine; DCy particularlypreferably stands for pyridine, quinoline or isoquinoline. These groupsmay each be substituted by R.

The group CCy is furthermore preferably a monocyclic group having 5 or 6aromatic ring atoms or a fused group having 9 or 10 aromatic ring atoms,particularly preferably selected from benzene, naphthalene, anthracene,thiophene, benzothiophene, pyrrole and indole; CCy particularlypreferably stands for benzene or naphthalene. These groups may each besubstituted by R¹.

Although evident from the above description, it should again explicitlybe emphasised that a plurality of radicals R¹ can form a ring systemwith one another Radicals R¹ on the groups CCy and DCy can thus alsoconnect these two rings via a further bridge.

The same preferences as already described above apply to the groups Xand Y. Compounds of the formulae (5) to (33) can likewise be reactedwith oligoalcohols, oligoamines or oligoaminoalcohols in order thus toobtain dimers, trimers, tetramers, etc. These are likewise asubject-matter of the present invention.

The invention again furthermore relates to oligomers, polymers anddendrimers comprising at least one boronic acid or borinic acidderivative, with the proviso that the boronic acid or borinic acidderivative in polymers and oligomers is not bonded to a chain end of thepolymer or not only as end group.

The same preferences as already described above for the use of thesecompounds apply to the polymers, oligomers and dendrimers according tothe invention.

The devices described above have the following surprising advantagesover the prior art:

-   1. The stability of corresponding devices is higher compared with    systems in accordance with the prior art, which is evident, in    particular, from a longer lifetime of the OLEDs.-   2. The boronic acid or borinic acid derivatives exhibit only a very    small Stokes shift. The emission spectrum of the boronic acid or    borinic acid derivative used as host thus has considerable overlap    with the absorption spectrum of the dopant. The overlap of emission    and absorption spectra is a prerequisite for good energy transfer to    the dopant and thus for high efficiency.-   3. In contrast to compounds used to date, some of which were    difficult to purify owing to their poor solubility, the boronic acid    and borinic acid derivatives are readily soluble and therefore    simpler to purify or easier to process from solution.-   4. The boronic acid or borinic acid derivatives employed can readily    be synthesised by standard methods of organic chemistry and are easy    to purify. They thus represent an advantage over compounds employed    in accordance with the prior art.-   5. The boronic acid and borinic acid derivatives have a lower    evaporation temperature than comparable compounds which do not carry    these substituents. This is of major advantage for the production of    OLEDs by vacuum vapour deposition since thermally sensitive parts of    the apparatus, such as, for example, the shadow masks, are thus    heated to a smaller extent.-   6. The boronic acid and borinic acid derivatives, in particular of    triplet emitters, have higher thermal stability than corresponding    compounds, in particular triplet emitters, in accordance with the    prior art which are unsubstituted or substituted in accordance with    the prior art only by alkyl or aryl groups, halogens, etc. Due to    the higher sublimation stability, they are easier to process, in    particular by sublimation during device production, which means a    significant advantage over the materials in accordance with the    prior art.-   7. The boronic acid and borinic acid derivatives are significantly    more stable to oxidation than boranes as employed in accordance with    the prior art. They are thus easier to handle and are therefore more    suitable for industrial use than aromatic boranes in accordance with    the prior art.

The present application text and also the following examples aredirected to the use of boronic acid or borinic acid derivatives inrelation to OLEDs and the corresponding displays. In spite of thisrestriction, it is readily possible for the person skilled in the art,without inventive step, also to use boronic acid or borinic acidderivatives for further uses in other electronic devices.

The invention is explained by the following examples without wishing tobe restricted thereby.

EXAMPLES

The following syntheses are carried out under a protective-gasatmosphere, unless indicated otherwise. The starting materials(9-bromoanthracene, 4-methylnaphth-1-ylboronic acid,9,10-dibromoanthracene, ethylene glycol, pinacol,hexafluoro-2,3-bis(trifluoromethyl)butane-2,3-diol, pinacolborane,1,4-dibromonaphthalene, p-xylene diethyl phosphonate,N,N,N′,N′-tetraphenylbenzidine, 4-bromobenzoyl chloride, DPEPhos,inorganics, solvents) can be obtained from ALDRICH, Lancaster, Sensient,Strem or ABCR. Dibromopyrene (isomer mixture) can be prepared by themethod of Minabe et al., Bull. Chem. Soc. Jpn. 1994, 67(1), 172,2,6-dibromoanthraquinone can be prepared by the method of Lee et al.,Org. Lett. 2005, 7(2), 323, bis(4-bromophenyl)methyl diethyl phosphonatecan be prepared in accordance with JP 09003079,bis(4-bromophenyl)(4-formylphenyl)amine can be prepared by the method ofHolmberg et al., Poly. Mat. Sci. Engen. 2001, 84, 717,4-bromophenylphosphorus dibromide can be prepared by the method of Hinkeet al., Phos. Sulf. Rel. El. 1983, 15(1), 93;fac-tris[2-(2-pyridinyl-κN)(5-bromophenyl)-κC]-iridium(III),fac-tris[2-(2-pyridinyl-κN)(4-fluoro-5-bromophenyl)-κC]-iridium(III) andfac-tris[2-(1-isoquinolinyl-κN)(5-bromophenyl)-κC]-iridium(III) areprepared in accordance with/analogously to WO 02/068435 (Example 4).

Example 1 Synthesis of anthracene-9,10-bis(boronic acid glycol ester)

428.0 ml (1.07 mol) of n-butyllithium (2.5M in n-hexane) are added overthe course of 20 min. to a vigorously stirred suspension, cooled to −78°C., of 150.0 g (446 mmol) of 9,10-dibromoanthracene in 2000 ml ofdiethyl ether, and the mixture is subsequently stirred at −78° C. for 30min. The suspension is allowed to warm to 20° C. over the course of 2 h,stirred at 20° C. for a further 2 h and re-cooled to −78° C. 199.0 ml(1.78 mol) of trimethyl borate are added over the course of 5 min. withvigorous stirring, and the suspension is allowed to re-warm to 20° C.After 15 h at 20° C., a mixture of 67.0 ml (1.12 mol) of acetic acid in300 ml of water is added, and the mixture is stirred at room temperaturefor a further 5 h. After the water phase has been separated off, theorganic phase is evaporated to dryness under reduced pressure. 500 ml ofn-hexane are added to the slurry which remains, and the mixture isstirred vigorously for 1 h. The solid formed is subsequently filteredoff with suction, washed twice with 200 ml of n-hexane and sucked dry.The solid is suspended in 500 ml of toluene, 60 ml of ethylene glycolare added, and the mixture is boiled on a water separator for 5 h. Thecrystals deposited after cooling of the toluene solution are filteredoff with suction, recrystallised a further twice from toluene andsubsequently sublimed (T=240° C., p=5×10⁻⁵ mbar). Yield: 71.3 g (50.3%of theory), 99.9% according to ¹H-NMR. The absorption andphotoluminescence spectrum of anthracene-9,10-bis(boronic acid glycolester) is shown in FIG. 1. As can clearly be seen, the compound exhibitsa very small Stokes shift.

Example 2 Synthesis of 10-(4-methylnaphth-1-yl)anthracene-9-boronic AcidPinacol Ester a) 9-(4-Methylnaphth-1-yl)anthracene

3.6 g (11.7 mmol) of tri-o-tolylphosphine and then 437 mg (1.9 mmol) ofpalladium(II) acetate are added with vigorous stirring to a suspensionof 93.0 g (500 mmol) of 4-methylnaphthalene-1-boronic acid, 100.0 g (389mmol) of 9-bromoanthracene, 212.3 g (1 mol) of tripotassium phosphate ina mixture of 400 ml of dioxane, 600 ml of toluene and 1000 ml of water,and the mixture is refluxed for 16 h. After the reaction mixture hasbeen cooled, the organic phase is separated off and washed three timeswith 500 ml of water. The organic phase is subsequently filtered throughsilica gel and evaporated to dryness. The oil which remains is taken upin 1000 ml of ethanol and dissolved under reflux. After cooling, thecolourless solid is filtered off with suction, again washed by stirringwith 1000 ml of ethanol and finally dried under reduced pressure. Yield:103.0 g (83.1% of theory), about 96% according to ¹H-NMR.

b) 9-Bromo-10-(4-methylnaphth-1-yl)anthracene

A mixture of 18.0 ml (352 mmol) of bromine in 100 ml of dichloromethaneis added dropwise with vigorous stirring to a solution of 102.0 g (320mmol) of 9-(4-methylnaphth-1-yl)anthracene in 2000 ml of dichloromethaneat −5° C., and the mixture is stirred at room temperature for 12 h. Thesuspension is subsequently diluted with 1000 ml of ethanol. Theprecipitated solid is filtered off with suction, washed with 500 ml of amixture of water and ethanol (1:1, v:v) and three times with 200 ml ofethanol. After washing twice with 1000 ml of boiling ethanol each time,the solid is dried under reduced pressure. Yield: 108.0 g (84.9% oftheory), about 97% according to ¹H-NMR.

c) 10-(4-Methylnaphth-1-yl)anthracene-9-boronic Acid Pinacol Ester

44.0 ml (110 mmol) of n-butyllithium (2.5M in n-hexane) are added overthe course of 20 min. to a vigorously stirred suspension, cooled to −78°C., of 39.7 g (100 mmol) of 9-bromo-10-(4-methylnaphth-1-yl)anthracenein 1000 ml of diethyl ether, and the mixture is subsequently stirred at−78° C. for 30 min. The suspension is allowed to warm to 20° C. over thecourse of 2 h, is stirred at 20° C. for a further 2 h and re-cooled to−78° C. 28.0 ml (250 mol) of trimethyl borate are added over the courseof 5 min. with vigorous stirring, and the suspension is allowed tore-warm to 20° C. After 15 h at 20° C., a mixture of 15.0 ml (250 mol)of acetic acid in 200 ml of water is added, and the mixture is stirredat room temperature for a further 5 h. After the water phase has beenseparated off, the organic phase is evaporated to dryness under reducedpressure. 300 ml of n-hexane are added to the slurry which remains, andthe mixture is stirred vigorously for 1 h. The solid formed issubsequently filtered off with suction, washed twice with 100 ml ofn-hexane and sucked dry. The solid is suspended in 150 ml of toluene,13.0 g (110 mmol) of pinacol are added, and the mixture is boiled on awater separator for 5 h. The crystals deposited after cooling of thetoluene solution are filtered off with suction, recrystallised twicefrom DMSO and subsequently sublimed (T=350° C., p=5×10⁻⁵ mbar); yield:30.4 g (68.4% of theory), 99.9% according to ¹H-NMR.

Example 3 Synthesis of 9,10-bis(phenyl-2-boronic acid pinacolester)anthracene a) 9,10-Bis(2-bromophenyl)anthracene

6.7 g (5.8 mmol) of tetrakis(triphenylphosphino)palladium(0) are addedto a solution of 149.0 ml (1.2 mol) of 1,2-dibromobenzene, 98.0 g (308mmol) of 9,10-anthracenediboronic acid ethylene glycol ester and 179.0 g(3.1 mol) of potassium fluoride (anhydrous, spray-dried) in a mixture of1300 ml of dioxane, 350 ml of ethanol and 950 ml of water, and themixture is refluxed for 120 h. After cooling, the precipitated solid isfiltered off with suction, washed three times with 100 ml of water eachtime and three times with 100 ml of ethanol each time and dried underreduced pressure. Yield: 64.3 g (132 mmol), 42.8% of theory; purity 98%according to ¹H-NMR, atropisomerically pure.

b) Synthesis of 9,10-bis(phenyl-2-boronic acid pinacol ester)anthracene

40.0 ml of n-BuLi (2.5M in hexane) are added to a suspension of 19.5 g(40 mmol) of 9,10-bis(2-bromophenyl)anthracene in 1000 ml of diethylether, and the mixture is stirred at room temperature for 6 h. Thereaction mixture is subsequently cooled to −78° C., and 26.8 ml (240mmol) of trimethyl borate are added rapidly with vigorous stirring.After slow warming to room temperature, a mixture of 8 ml of acetic acidand 300 ml of water and then 500 ml of ethyl acetate are added, themixture is stirred at room temperature for a further 1 h, and theorganic phase is separated off, washed twice with 500 ml of water andevaporated under reduced pressure. 300 ml of toluene and 10.6 g (90mmol) of pinacol are added to the residue, and the mixture is heated ona water separator. When the separation of water is complete, 250 ml oftoluene are distilled off, and 300 ml of ethanol are added. Aftercooling, the colourless solid is filtered off with suction,recrystallised three times from toluene and dried under reducedpressure. Sublimation, p=1×10⁻⁵ mbar, T=260° C. Yield: 10.6 g (18 mmol),45.5% of theory; purity: 99.9% according to ¹H-NMR.

Example 4 Synthesis of 1,2-bis(anthracen-9-yl-10-boronic acid pinacolester)benzene a) 1,2-Bis(anthracen-9-yl)benzene

Procedure analogous to Example 3a. Instead of 149.0 ml (1.2 mol) of1,2-dibromobenzene and 98.0 g (308 mmol) of 9,10-anthracenediboronicacid ethylene glycol ester, 12.1 ml (100 mmol) of dibromobenzene and68.0 g (306 mmol) of 9-anthraceneboronic acid are used. After cooling,the solid is filtered off with suction, washed three times with 100 mlof ethanol each time and then washed twice by stirring with 1000 ml ofrefluxing acetic acid each time (1 h) and each time filtered off withsuction after cooling to 90° C. The mother liquor is discarded in eachcase. The solid is finally washed once with boiling ethanol. Yield: 33.0g (76 mmol), 76.6% of theory; purity: 98% according to ¹H-NMR.

b) 1,2-Bis(10-bromoanthracen-9-yl)benzene

142.4 g (800 mmol) of N-bromosuccinimide are added with exclusion oflight to a suspension of 86.1 g (200 mmol) of1,2-bis(anthracen-9-yl)benzene and 500 g of glass beads (diameter 4 mm)in 2000 ml of THF, stirred by a precision glass stirrer. The mixture isstirred at room temperature for 24 h, then the glass beads are filteredoff via a sieve and washed with THF, and the solid is filtered off fromthe THF, washed three times with 200 ml of ethanol each time and thendried under reduced pressure. Yield: 114.1 g (194 mmol), 97.0% oftheory; purity: 97% according to ¹H-NMR.

c) 1,2-Bis(anthracen-9-yl-10-boronic acid pinacol ester)benzene

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of1,2-bis(10-bromoanthracen-9-yl)benzene are used. Sublimation at p=1×10⁻⁵mbar, T=310° C. Yield: 17.1 g (25 mmol), 62.6% of theory; purity: 99.9%according to ¹H-NMR.

Example 5 Synthesis of 1,4-bis(anthracen-9-yl-10-boronic acid pinacolester)naphthalene a) 1,4-Bis(anthracen-9-yl)naphthalene

Procedure analogous to Example 3a. Instead of 149.0 ml (1.2 mol) of1,2-dibromobenzene and 98.0 g (308 mmol) of 9,10-anthracenediboronicacid ethylene glycol ester, 28.6 g (100 mmol) of 1,4-dibromonaphthaleneand 68.0 g (306 mmol) of 9-anthraceneboronic acid are used. Aftercooling, the solid is filtered off with suction and washed twice with500 ml of boiling ethanol each time. Yield: 33.0 g (69 mmol), 68.7% oftheory; purity: 98% according to ¹H-NMR.

b) 1,4-Bis(10-bromoanthracen-9-yl)naphthalene

Procedure analogous to Example 4b. Instead of 86.0 g (200 mmol) of1,2-bis(anthracen-9-yl)benzene and 142.4 g (800 mmol) ofN-bromosuccinimide, 96.1 g (200 mmol) of1,4-bis(anthracen-9-yl)naphthalene and 42.7 g (240 mmol) ofN-bromosuccinimide are used. Yield: 109.2 g (171 mmol), 85.5% of theory;purity: 97% according to ¹H-NMR.

c) 1,4-Bis(anthracen-9-yl-10-boronic acid pinacol ester)naphthalene

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 25.5 g (40 mmol) of1,4-bis(10-bromoanthracen-9-yl)naphthalene are used. Sublimation atp=1×10⁻⁵ mbar, T=300° C. Yield: 12.1 g (16.5 mmol), 41.3% of theory;purity: 99.8% according to ¹H-NMR.

Example 6 Synthesis of 9,10-bis(naphth-1-yl)anthracene-2,6-bis(boronicacid pinacol ester) a) 2,6-Dibromo-9,10-bis(naphth-1-yl)anthracene

The corresponding Grignard reagent is prepared from 30.5 ml (220 mmol)of 1-bromonaphthalene and 5.5 g (225 mmol) of magnesium in 500 ml ofTHF. 36.6 g (100 mmol) of 2,6-dibromoanthraquinone are added to thisGrignard reagent, the mixture is refluxed for 6 h and allowed to cool,15 ml of acetic acid are added, the mixture is evaporated to dryness,the residue is taken up in 500 ml of DMF, 56.9 g (300 mmol) of tin(II)chloride are added, and the mixture is refluxed for 5 h. After cooling,200 ml of 2N hydrochloric acid are added, the mixture is stirred for afurther 1 h, the solid is filtered off with suction, washed three timeswith 200 ml of 2N hydrochloric acid each time, three times with 300 mlof water each time, and three times with 200 ml of ethanol each time,dried under reduced pressure and recrystallised once from DMF. Yield:48.9 g (83 mmol), 83.1% of theory; purity: 98% according to ¹H-NMR.

b) 9,10-Bis(naphth-1-yl)anthracene-2,6-bis(boronic acid pinacol ester)

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of2,6-dibromo-9,10-bis(naphth-1-yl)anthracene are used. Recrystallisationtwice from both toluene and then dioxane. Sublimation at p=1×10⁻⁵ mbar,T=270° C. Yield: 14.6 g (21 mmol), 53.5% of theory; purity: 99.9%according to ¹H-NMR.

Example 7 Synthesis of 9,10-bis(naphth-1-yl-4-boronic acid pinacolester)anthracene a) 9,10-Bis(4-bromonaphth-1-yl)anthracene

48.0 ml (120 mmol) of n-butyllithium (2.5M in hexane) are added at −78°C. with vigorous stirring to a solution of 31.9 g (120 mmol) of1,4-dibromonaphthalene in 1000 ml of THF. The mixture is stirred at −78°C. for 1 h, then allowed to warm to 0° C., 10.4 g (50 mmol) ofanthraquinone are added, and the mixture is stirred at 0° C. for afurther 3 h. After 15 ml of acetic acid have been added, the mixture isevaporated to dryness, the residue is taken up in 500 ml of DMF, 28.4 g(150 mmol) of tin(II) chloride are added, and the mixture is refluxedfor 5 h. After cooling, 200 ml of 2N hydrochloric acid are added, themixture is stirred for a further 1 h, the solid is filtered off withsuction, washed three times with 200 ml of 2N hydrochloric acid eachtime, three times with 300 ml of water each time and three times with200 ml of ethanol each time, dried under reduced pressure andrecrystallised from NMP. Yield: 25.9 g (44 mmol), 88.0% of theory;purity: 98% according to ¹H-NMR.

b) 9,10-Bis(4-bromonaphth-1-yl)anthracene

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of9,10-bis(4-bromonaphth-1-yl)anthracene are used. Owing to the poorsolubility of the 9,10-bis(4-bromonaphth-1-yl)anthracene, 200 g of glassbeads (diameter 4 mm) are added to the batch, the stirring is carriedout using a mechanical paddle stirrer, and the reaction time for thelithiation is increased to 24 h. Recrystallisation four times fromdioxane. Sublimation at p=1×10⁻⁵ mbar, T=290° C. Yield: 17.6 g (26mmol), 64.5% of theory; purity: 99.9% according to ¹H-NMR.

Example 8 Synthesis of 1,6-bis(2,5-dimethylphenyl)pyrene-3,8-bis(boronicacid pinacol ester) a) 1,6-Bis(2,5-dimethylphenyl)pyrene

7.2 g (20 mmol) of tri-o-tolylphosphine and 740 mg (3.3 mmol) ofpalladium(II) acetate are added to a vigorously stirred suspension of76.0 g (211 mmol) of dibromopyrene (isomer mixture), 72.9 g (486 mmol)of 2,5-dimethylphenylboronic acid and 222.4 g (966 mmol) of potassiumphosphate monohydrate in a mixture of 500 ml of toluene, 500 ml ofdioxane and 100 ml of water, and the mixture is refluxed for 12 h. Aftercooling to room temperature, the precipitated solid is filtered off withsuction, washed with 200 ml of ethanol and dissolved in 500 ml ofdichloromethane with warming, the solution is filtered through silicagel, the filtrate is evaporated to 1000 ml under reduced pressure, and300 ml of ethanol are added. After standing for 2 h, the colourlesscrystals are filtered off with suction, washed with 100 ml of ethanoland dried under reduced pressure. Yield: 32.5 g (79 mmol), 37.5% oftheory; purity 98% according to ¹H-NMR.

b) 1,6-Bis(2,5-dimethylphenyl)-3,8-dibromopyrene

A suspension of 25.8 g (63 mmol) of 1,6-bis(2,5-dimethylphenyl)pyreneand 24.8 g (139 mmol) of N-bromosuccinimide in 800 ml of THF is stirredat room temperature with exclusion of light for 16 h. The reactionmixture is evaporated to 100 ml under reduced pressure, and 200 ml ofethanol and 200 ml of water are added. The precipitate is filtered offwith suction, washed three times with 100 ml of ethanol, dried underreduced pressure and recrystallised twice from chlorobenzene. Yield:26.0 g (46 mmol), 72.6% of theory; purity 97% according to ¹H-NMR.

c) 1,6-Bis(2,5-dimethylphenyl)pyrene-3,8-bis(boronic acid pinacol ester)

Procedure analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 22.7 g (40 mmol) of1,6-bis(2,5-dimethylphenyl)-3,8-dibromopyrene are employed. Therecrystallisation is carried out from dioxane. Sublimation, p=1×10⁻⁵mbar, T=290° C. Yield: 11.5 g (17 mmol), 43.3% of theory; purity: 99.9%according to ¹H-NMR.

Example 9 Synthesis of 1,4-bis(anthracen-9-yl-10-boronic acidpyrocatechol ester)naphthalene

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 25.5 g (40 mmol) of1,4-bis(10-bromoanthracen-9-yl)naphthalene are used, and instead of 10.6g (90 mmol) of pinacol, 9.9 g (90 mmol) of pyrocatechol are used.Sublimation at p=1×10⁻⁵ mbar, T=330° C. Yield: 17.7 g (25 mmol), 61.8%of theory; purity: 99.7% according to ¹H-NMR.

Example 10 Synthesis of 9,10-bis(naphth-1-yl)anthracene-3,8-bis(boronicacid pyrocatechol ester)

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of2,6-dibromo-9,10-bis(naphth-1-yl)anthracene are used, and instead of10.6 g (90 mmol) of pinacol, 9.9 g (90 mmol) of pyrocatechol are used.Sublimation at p=1×10⁻⁵ mbar, T=305° C. Yield: 9.2 g (14 mmol), 34.5% oftheory; purity: 99.9% according to ¹H-NMR.

Example 112,4,6-Tris[10-(4-methylnaphth-1-yl)anthracen-9-yl]-cyclotriboroxane

Preparation analogous to Example 2c. After isolation of the boronicacid, it is suspended in 300 ml of acetonitrile and boiled on a waterseparator for 5 h, during which the azeotrope is removed continuouslydown to 50 ml. After addition of 300 ml of ethanol and cooling, thedeposited crystals are filtered off with suction, recrystallised fourtimes from dioxane and subsequently sublimed (T=370° C., p=5×10⁻⁵ mbar);yield: 15.8 g (18 mmol), 45.9% of theory; purity: 99.9% according to¹H-NMR.

Example 12 9,10-Bis(naphth-1-yl)anthracene-3,8-bis(boronic acidhexafluoro-2,3-bis(trifluoromethyl)but-2,3-yl ester)

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of2,6-dibromo-9,10-bis(naphth-1-yl)anthracene are used. Instead of 10.6 g(90 mmol) of pinacol, 30.1 g (90 mmol) ofhexafluoro-2,3-bis(trifluoromethyl)butane-2,3-diol are used.Recrystallisation five times from toluene/acetonitrile. Sublimation atp=1×10⁻⁵ mbar, T=280° C. Yield: 18.1 g (16 mmol), 40.6% of theory;purity: 99.8% according to ¹H-NMR.

Example 13 Synthesis of9,10-bis(naphth-1-yl)anthracene-3,8-bis(2-(3-methyl-2,3-dihydrobenzo-1,3,2-oxazaborole)

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 23.5 g (40 mmol) of2,6-dibromo-9,10-bis(naphth-1-yl)anthracene are used. Instead of 10.6 g(90 mmol) of pinacol, 11.1 g (90 mmol) of 2-methylaminophenol are used.Recrystallisation four times from DMF. Sublimation at p=1×10⁻⁵ mbar,T=280° C. Yield: 14.9 g (21.5 mmol), 53.8% of theory; purity: 99.9%according to ¹H-NMR.

Example 14 Synthesis of tris((4-(2,2-di(4-phenylboronic acid pinacolester)vinyl)phen-1-yl)amine a)Tris((4-(2,2-di(4-bromophenyl)vinyl)phen-1-yl)amine

A solution of 184.8 g (400 mmol) of bis(4-bromophenyl)methyldiethylphosphonate in 200 ml of DMF is added to a suspension, cooled to0° C., of 76.9 g (800 mmol) of sodium tert-butoxide in 1000 ml ofanhydrous DMF. After the mixture has been stirred for a further 30 min.,a solution of 32.9 g (100 mmol) of tris(4-formyl)amine in 300 ml of DMFis added over the course of 30 min., the mixture is stirred at 0° C. fora further 4 h, then 1000 ml of 1N hydrochloric acid and 500 ml ofethanol are added. The solid is filtered off with suction, washed threetimes with 300 ml of water and three times with 200 ml of ethanol anddried under reduced pressure. The product is subsequently recrystallisedfrom DMF, filtered off with suction, washed three times with 200 ml ofethanol and dried under reduced pressure. Yield: 109.4 g (87 mmol),87.3% of theory; purity: 99% according to ¹H-NMR.

b) Tris((4-(2,2-di(4-phenylboronic acid pinacolester)vinyl)phen-1-yl)amine

65 ml of n-BuLi (2.5M in hexane) are added to a suspension of 31.3 g (25mmol) of tris((4-(2,2-di(4-bromophenyl)vinyl)phen-1-yl)amine in 1000 mlof diethyl ether, and the mixture is stirred at room temperature for 6h. The reaction mixture is subsequently cooled to −78° C., and 44.5 ml(450 mmol) of trimethyl borate are added rapidly with vigorous stirring.After slow warming to room temperature, a mixture of 15 ml of aceticacid and 500 ml of water and then 500 ml of ethyl acetate are added, themixture is stirred at room temperature for a further 1 h, and theorganic phase is separated off, washed twice with 500 ml of water andevaporated under reduced pressure. 500 ml of toluene and 18.9 g (160mmol) of pinacol are added to the residue, and the mixture is heated ona water separator.

When the separation of water is complete, 400 ml of toluene aredistilled off, and 300 ml of ethanol are added. After cooling, theyellow solid is filtered off with suction, recrystallised five timesfrom dioxane/ethanol (1:3, v:v) and sublimed under reduced pressure(p=1×10⁻⁵ mbar, T 330° C.). Yield: 14.5 g (9 mmol), 37.7% of theory;purity: 99.9% according to ¹H-NMR.

Example 15 Synthesis of 1,4-bis(4-di(4-phenylboronic acid pinacolester)aminostyryl)benzene a)1,4-Bis(4-di(4-bromophenyl)aminostyryl)benzene

A solution of 37.8 g (100 mmol) of p-xylene diethylphosphonate in 200 mlof DMF is added to a suspension, cooled to 0° C., of 38.5 g (400 mmol)of sodium tert-butoxide in 1000 ml of anhydrous DMF. After the mixturehas been stirred for a further 30 min., a solution of 90.5 g (210 mmol)of bis(4-bromophenyl)(4-formylphenyl)amine in 300 ml of DMF is addedover the course of 30 min., the mixture is stirred at 0° C. for afurther 4 h, and then 500 ml of 1N hydrochloric acid and 300 ml ofethanol are added. The solid is filtered off with suction, washed threetimes with 300 ml of water and three times with 200 ml of ethanol anddried under reduced pressure. The product is subsequently recrystallisedfrom DMF, filtered off with suction, washed three times with 200 ml ofethanol and dried under reduced pressure. Yield: 86.1 g (92 mmol), 92.3%of theory; purity: 99% according to ¹H-NMR.

b) 1,4-Bis(4-di(4-phenylboronic acid pinacol ester)aminostyryl)benzene

Preparation analogous to Example 14b. Instead of 31.3 g (25 mmol) oftris((4-(2,2-di(4-bromophenyl)vinyl)phen-1-yl)amine, 34.5 g (37 mmol) of1,4-bis(4-di(4-bromophenyl)aminostyryl)benzene are used. Sublimation,p=1×10⁻⁵ mbar, T=310° C. Yield: 18.9 g (17 mmol), 45.6% of theory;purity: 99.7% according to ¹H-NMR.

Example 16 Synthesis ofN,N,N′,N′-tetrakis(4-1,3,2-dioxaborolan-2-ylphenyl)biphenyl-4,4′-diaminea) N,N,N′,N′-tetra(4-bromophenyl)benzidine

74.8 g (420 mmol) of N-bromosuccinimide are added in portions to asolution of 48.9 g (100 mmol) of N,N,N′,N′-tetraphenylbenzidine in 500ml of THF at 40° C. with vigorous stirring, and the mixture is stirredfor 16 h. The mixture is subsequently transferred onto 2000 g of ice,and the resultant precipitate is filtered off with suction, washed threetimes with 300 ml of water and twice with 200 ml of ethanol and thenrecrystallised from DMF. Yield: 73.5 g (91 mmol), 91.4% of theory;purity 98% according to ¹H-NMR.

b)N4,N4′,N4″,N4′″-tetrakis(4-1,3,2-dioxaborolan-2-ylphenyl)biphenyl-4,4′-diamine

Preparation analogous to Example 15b. Instead of 34.5 g (37 mmol) of1,4-bis(4-di(4-bromophenyl)aminostyryl)benzene, 29.8 g (37 mmol) ofN,N,N′,N′-tetra(4-bromophenyl)benzidine are used, and instead of 18.9 g(160 mmol) of pinacol, 9.0 ml (160 mmol) of ethylene glycol are used.Recrystallisation from toluene. Sublimation, p=1×10⁻⁵ mbar, T=250° C.Yield: 21.3 g (28 mmol), 75.0% of theory; purity: 99.9% according to¹H-NMR.

Example 17 Synthesis of2,2′-bis(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)spiro-9,9′-bifluorenea) 2,2′-Bis(4-bromobenzoyl)spiro-9,9′-bifluorene

A solution of 24.1 g (110 mmol) of 4-bromobenzoyl chloride in 100 ml of1,2-dichloroethane is added dropwise to a suspension of 16.0 g (120mmol) of aluminium chloride in 300 ml of 1,2-dichloroethane. A solutionof 15.8 g (50 mmol) of spiro-9,9′-bifluorene in 200 ml of1,2-dichloroethane is added dropwise to this mixture. The mixture issubsequently stirred at room temperature for a further 4 hours andpoured into a mixture of 1000 g of ice and 200 ml of 2N hydrochloricacid with vigorous stirring, and the precipitated solid is filtered offwith suction. The solid is washed three times with 500 ml of water andthree times with 200 ml of ethanol and dried under reduced pressure.Yield: 29.2 g (43 mmol), 85.6% of theory; purity: 98% according to¹H-NMR.

b)2,2′-Bis(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)spiro-9,9′-bifluorene

The preparation is carried out by the method of Melaimi et al., J.Organomet. Chem. 2004, 689(19), 2988, analogously to the preparation of2-(4-acetylphenyl)-4,4,5,5-tetramethyl-1,3,2-dioxaborolane. Instead of4-acetylbromobenzene, 17.1 g (25 mmol) of2,2-bis(4-bromobenzoyl)spiro-9,9′-bifluorene are employed. Sublimation,p=1×10⁻⁵ mbar, T=265° C. Yield: 8.4 g (11 mmol), 43.2% of theory;purity: 99.9% according to ¹H-NMR.

Example 18 Synthesis of2-bis(spiro-9,9′-bifluorene)-(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)phosphineOxide a) 2-Bis(spiro-9,9′-bifluorene)-(4-bromophenyl))phosphine Oxide

Preparation analogous to WO 05/003253, Example 1. Instead ofdichlorophenylphosphine, 41.6 g (120 mmol) of 4-bromophenylphosphorusdibromide are used. Recrystallisation twice from chlorobenzene. Yield:71.0 g (71 mmol), 71.0% of theory; purity: 98% according to ¹H-NMR.

b)2-Bis(spiro-9,9′-bifluorene)-(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)phosphineOxide

Preparation analogous to Example 17b. Instead of 17.1 g (25 mmol) of2,2′-bis(4-bromobenzoyl)spiro-9,9′-bifluorene, 20.8 g (25 mmol) of2-bis(spiro-9,9′-bifluorene)-(4-bromophenyl))phosphine oxide areemployed. Sublimation, p=1×10⁻⁵ mbar, T=310° C. Yield: 8.0 g (9 mmol),36.3% of theory; purity: 99.9% according to ¹H-NMR.

Example 19 Synthesis of4,4′-bis(4,4′-bis(1,3,2-dioxaborolan-2-yl)carbazolyl)biphenyl a)4,4′-Bis(4,4′-bisbromocarbazolyl)biphenyl

74.8 g (420 mmol) of N-bromosuccinimide are added in portions to asolution of 48.5 g (100 mmol) of biscarbazolylbiphenyl in 1000 ml of THFat 40° C. with vigorous stirring, and the mixture is then stirred for 16h. The mixture is subsequently transferred onto 2000 g of ice, and theresultant precipitate is filtered off with suction, washed three timeswith 300 ml of water and twice with 200 ml of ethanol and recrystallisedfrom DMF. Yield: 74.3 g (93 mmol), 92.8% of theory; purity 98% accordingto ¹H-NMR.

b) 4,4′-Bis(4,4′-bis(1,3,2-dioxaborolan-2-yl)carbazolyl)biphenyl

Preparation analogous to Example 16b. Instead of 29.8 g (37 mmol) ofN,N,N′,N′-tetra(4-bromophenyl)benzidine, 29.6 g (37 mmol) of4,4′-bis(4,4′-bisbromocarbazolyl)biphenyl are used, and instead of 18.9g (160 mmol) of pinacol, 9.0 ml (160 mmol) of ethylene glycol are used.Recrystallisation from dioxane. Sublimation, p=1×10⁻⁵ mbar, T=270° C.Yield: 21.3 g (28 mmol), 75.3% of theory; purity: 99.9% according to¹H-NMR.

Example 20 Synthesis of1,6-bis((4-methylphenyl)amino)pyrene-3,8-bis(boronic acid pinacol ester)a) 1,6-Bis((4-methylphenyl)amino)pyrene

1.05 ml (5.2 mmol) of di-tert-butylphosphine chloride and then 898 mg(4.0 mmol) of palladium(II) acetate are added to a vigorously stirredsuspension of 76.0 g (211 mmol) of dibromopyrene (isomer mixture), 94.7g (480 mmol) of bis(4-methylphenyl)amine and 50.0 g (520 mmol) of sodiumtert-butoxide in 1000 ml of toluene, and the mixture is refluxed for 5h. After cooling to room temperature, 1000 ml of water are added, andthe precipitated solid is filtered off with suction, washed with 200 mlof ethanol and dried under reduced pressure. Recrystallisation, threetimes from DMF. Yield: 41.4 g (70 mmol), 33.1% of theory; purity 99%according to ¹H-NMR.

b) 1,6-Bis((4-methylphenyl)amino)-3,8-dibromopyrene

Preparation analogous to Example 8b. Instead of 25.8 g (63 mmol) of176-bis(2,5-dimethylphenyl)pyrene, 29.6 g (50 mmol) of1,6-bis((4-methylphenyl)amino)pyrene are used, and instead of 24.8 g(139 mmol) of N-bromosuccinimide, 19.6 g (110 mmol) ofN-bromosuccinimide are used. Yield: 27.4 g (36.5 mmol), 73.0% of theory;purity 99% according to ¹H-NMR.

c) 1,6-Bis((4-methylphenyl)amino)pyrene-3,8-bis(boronic acid pinacolester)

Procedure analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 30.0 g (40 mmol) of1,6-bis((4-methylphenyl)amino)-3,8-dibromopyrene are employed. Therecrystallisation is carried out from chlorobenzene. Sublimation,p=1×10⁻⁵ mbar, T=285° C. Yield: 13.8 g (16 mmol), 40.8% of theory;purity: 99.9% according to ¹H-NMR.

Example 21 Synthesis of9,10-bis((bis-4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)amino)anthracenea) 9,10-Bis(diphenylamino)anthracene

Preparation analogous to Example 20a. Instead of 76.0 g (211 mmol) ofdibromopyrene (isomer mixture) and 94.7 g (480 mmol) ofbis(4-methylphenyl)amine, 70.9 g (211 mmol) of 9,10-dibromoanthraceneand 81.2 g (480 mmol) of diphenylamine are used. Yield: 86.2 g (168mmol), 79.7% of theory; purity 99% according to ¹H-NMR.

b) 9,10-Bis-N,N-(di(4-bromophenyl)amino)anthracene

Preparation analogous to Example 16a. Instead of 48.9 g (100 mmol) ofN,N,N′,N′-tetraphenylbenzidine, 51.3 g (100 mmol) of9,10-bis(diphenylamino)anthracene are used. Yield: 70.8 g (85 mmol),85.5% of theory; purity 98% according to ¹H-NMR.

c)9,10-Bis((bis-4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)amino)anthracene

Preparation analogous to Example 3b. Instead of 19.5 g (40 mmol) of9,10-bis(2-bromophenyl)anthracene, 16.6 g (20 mmol) of9,10-bis(di(4-bromophenyl)amino)anthracene are used. Therecrystallisation is carried out from chlorobenzene. Sublimation,p=1×10⁻⁵ mbar, T=285° C. Yield: 9.9 g (9.7 mmol), 48.7% of theory;purity 99.8% according to ¹H-NMR.

Example 22 Synthesis offac-tris[2-(2-pyridinyl-κN)(5-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-ylphenyl)-κC]-iridium(III)

The preparation is carried out by the method of Broutin et al., Org.Lett. 2004, 6(24), 4419 analogously to the general preparation procedurefor phenylboronates. 892 mg (1 mmol) offac-tris[2-(2-pyridinyl-κN)(5-bromophenyl)-κC]iridium(III) in 10 ml ofdioxane and 1.3 g (10 mmol) of pinacolborane are employed, and thereaction time is 16 h. Chromatographic purification on deactivatedsilica gel (5% of triethylamine), eluent dichloromethane:n-hexane (1:10,v:v). Sublimation, p=1×10⁻⁵ mbar, T=295° C. Yield: 325 mg (31.5 μmol),31.5% of theory; purity: 99.9% according to ¹H-NMR.

Example 23 Synthesis offac-tris[2-(2-pyridinyl-κN)(4-fluoro-5-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)-κC]iridium(III)

The preparation is carried out by the method of Broutin et al., Org.Lett. 2004, 6(24), 4419 analogously to the general preparation procedurefor phenylboronates. 946 mg (1 mmol) offac-tris[2-(2-pyridinyl-κN)(4-fluoro-5-bromophenyl)-κC]iridium(III) in10 ml of dioxane and 1.3 g (10 mmol) of pinacolborane are employed, andthe reaction time is 16 h. Chromatographic purification on deactivatedsilica gel (5% of triethylamine), eluent dichloromethane:n-hexane (1:10,v:v). Sublimation, p=1×10⁻⁵ mbar, T=280° C. Yield: 324 mg (298 μmol),29.8% of theory; purity: 99.8% according to ¹H-NMR.

Example 24 Synthesis offac-tris[2-(1-isoquinolinyl-κN)(5-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)-κC]-iridium(III)

The preparation is carried out by the method of Broutin et al., Org.Lett. 2004, 6(24), 4419 analogously to the general preparation procedurefor phenylboronates. 1042 mg (1 mmol) offac-tris[2-(1-isoquinolinyl-κN)(5-bromophenyl)-κC]iridium(III) in 10 mlof dioxane and 1.3 g (10 mmol) of pinacolborane are employed, and thereaction time is 16 h. Chromatographic purification on deactivatedsilica gel (5% of triethylamine), eluent dichloromethane:n-hexane (1:10,v:v). Sublimation, p=1×10⁻⁵ mbar, T=340° C. Yield: 485 mg (410 μmol),41.0% of theory; purity: 99.9% according to ¹H-NMR.

Example 25 Production of OLEDs Comprising the Materials According to theInvention According to Examples 1 to 13

OLEDs are produced by a general process in accordance with WO 04/058911,which is adapted in individual cases to the particular circumstances(for example layer-thickness variation in order to achieve optimumefficiency or colour).

The results for various OLEDs are presented in Examples 26 to 39 below.The basic structure and the materials used (apart from the emittinglayer) are identical in the examples for better comparability. OLEDshaving the following structure are produced analogously to theabove-mentioned general process:

Hole-injection 20 nm PEDOT (spin-coated from water; from layer (HIL) H.C. Starck, Goslar, Germany; poly(3,4- ethylenedioxy-2,5-thiophene))Hole-transport 30 nm 4,4′,4″-tris(N-1-naphthyl-N-phenyl- layer (HTL)amino)triphenylamine (abbreviated to NaphDATA, purchased from SynTec)Hole-transport 30 nm NPB (N-naphthyl-N-phenyl-4,4′- layer (HTL)diaminobiphenyl) Emission 30 nm layer of the host materials in accor-layer (EML) dance with Examples 1 to 13 (see table), doped with 5% oftris[4-(2,2-diphenyl-vinyl)- phenyl]amine as dopant (abbreviated to D1,vapour-deposited, synthesised in accordance with WO 06/000388) OR: ascomparative example 30 nm 9,10-bis(1- naphthylanthracene) as hostmaterial (abbre- viated to H), doped with 5% of tris[4-(2,2-di-phenylvinyl)phenyl]amine as dopant (abbre- viated to D1) Electron 20 nmAlQ₃ (purchased from SynTec, conductor (ETC)tris(quinolinato)aluminium(III)) Cathode 1 nm LiF, 150 nm Al on top

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), are determined for this purpose.

Table 1 shows the results for some OLEDs (Examples 26 to 39).

The host material employed for the comparative example is9,10-bis(1-naphthyl)anthracene; the dopant employed in all examples isD1. Both are prepared as follows:

As can be seen from the examples in Table 1, OLEDs comprising the hostmaterials according to Examples 1 to 13 according to the inventionexhibit lower operating voltages. Besides significantly improved powerefficiencies, equivalent to lower power consumption for the sameoperating brightnesses, this also results in improved lifetimes.

TABLE 1 Voltage Max. (V) at efficiency 1000 Example EML (cd/A) cd/m² CIEExample 26 Host H 7.9 6.6 x = 0.17; (Comparison) Dopant D1 y = 0.31Example 27 Host acc. to Ex. 1 8.2 5.3 x = 0.16; Dopant D1 y = 0.28Example 28 Host acc. to Ex. 2 8.3 5.2 x = 0.16; Dopant D1 y = 0.29Example 29 Host acc. to Ex. 3 8.2 5.3 x = 0.16; Dopant D1 y = 0.29Example 30 Host acc. to Ex. 4 8.0 5.4 x = 0.16; Dopant D1 y = 0.30Example 31 Host acc. to Ex. 5 8.5 5.0 x = 0.16; Dopant D1 y = 0.28Example 32 Host acc. to Ex. 6 8.6 4.9 x = 0.16; Dopant D1 y = 0.29Example 33 Host acc. to Ex. 7 8.7 4.7 x = 0.15; Dopant D1 y = 0.27Example 34 Host acc. to Ex. 8 8.5 4.9 x = 0.16; Dopant D1 y = 0.28Example 35 Host acc. to Ex. 9 8.3 5.0 x = 0.17; Dopant D1 y = 0.29Example 36 Host acc. to Ex. 10 8.4 5.1 x = 0.16; Dopant D1 y = 0.29Example 37 Host acc. to Ex. 11 8.7 5.4 x = 0.15; Dopant D1 y = 0.27Example 38 Host acc. to Ex. 12 8.6 5.5 x = 0.16; Dopant D1 y = 0.28Example 39 Host acc. to Ex. 13 7.9 5.3 x = 0.16; Dopant D1 y = 0.29

Example 40 Production of OLEDs Comprising the Host Materials Accordingto Examples 5 to 8 or Host H and the Emitters According to Examples 14and 15

The results for various OLEDs are presented in Examples 41 to 51 below.The basic structure and the materials used (apart from the emittinglayer) are identical in the examples for better comparability. OLEDshaving the following structure are produced analogously to theabove-mentioned general process:

Hole-injection 20 nm PEDOT (spin-coated from water; from layer (HIL) H.C. Starck, Goslar, Germany; poly(3,4- ethylenedioxy-2,5-thiophene))Hole-transport 30 nm 4,4′,4″-tris(N-1-naphthy,-N-phenyl- layer (HTL)amino)triphenylamine (abbreviated to NaphDATA, purchased from SynTec)Hole-transport 30 nm NPB (N-naphthyl-N-phenyl-4,4′-di- layer (HTL)aminobiphenyl) Emission 30 nm layer of the host materials in accor-layer (EML) dance with Examples 5, 6, 7, 8 (see table), doped with 5% ofdopant according to Exam- ple 14 or 15 OR: as comparative example9,10-bis(1-naphthyl- anthracene) as host material (abbreviated to H),doped with 5% of tris[4-(2,2-diphenyl- vinyl)phenyl]amine as dopant(abbreviated to D1), vapour-deposited, synthesised in accor- dance withWO 06/000388 or doped with 5% of 1,4-bis(4-di(3-methyl-phenyl)aminostyryl)benzene as dopant (ab- breviated to D2),vapour-deposited, synthe- sised in accordance with JP 06001973 Electron20 nm AlQ₃ (purchased from SynTec, conductor (ETC)tris(quinolinato)aluminium(III)) Cathode 1 nm LiF, 150 nm Al on top

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), are determined for this purpose.

Table 2 shows the results for some OLEDs (Examples 41 to 51). The hostmaterial for the comparative examples is 9,10-bis(1-naphthyl)anthracene(see above), and the dopants employed for the comparative examples areD1 (see above) and D2.

As can be seen from the examples in Table 2, OLEDs comprising the hostmaterials according to the invention exhibit significantly improvedefficiencies at the same time as comparable colour coordinates andimproved lifetimes.

In addition, the considerably improved thermal stability of the dopantaccording to Example 15 according to the invention compared with dopantD2, which is structurally analogous, but is not substituted by4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl groups, should again bepointed out at this point. This improved stability is of crucialimportance, in particular on industrial use, since dopants in industrialuse must have lifetimes of several days to weeks at high temperatures.

TABLE 2 Voltage Max. (V) at efficiency 1000 Example EML (cd/A) cd/m² CIEExample 41 Host H 7.9 6.6 x = 0.17; (comparison) Dopant D y = 0.31Example 42 Host H 9.8 5.1 x = 0.19; Dopant acc. to Ex. 14 y = 0.31Example 43 Host H 12.3 5.0 x = 0.21; Dopant acc. to Ex. 15 y = 0.33Example 44 Host acc. to Ex. 5 10.2 5.0 x = 0.17; Dopant acc. to Ex. 14 y= 0.31 Example 45 Host acc. to Ex. 6 10.3 4.9 x = 0.18; Dopant acc. toEx. 14 y = 0.32 Example 46 Host acc. to Ex. 7 9.9 5.2 x = 0.18; Dopantacc. to Ex. 14 y = 0.32 Example 47 Host acc. to Ex. 8 10.6 4.9 x = 0.18;Dopant acc. to Ex. 14 y = 0.32 Example 48 Host acc. to Ex. 5 13.2 5.0 x= 0.19; Dopant acc. to Ex. 15 y = 0.32 Example 49 Host acc. to Ex. 613.0 4.9 x = 0.19; Dopant acc. to Ex. 15 y = 0.32 Example 50 Host acc.to Ex. 7 12.9 5.2 x = 0.19; Dopant acc. to Ex. 15 y = 0.32 Example 51Host acc. to Ex. 8 12.7 4.9 x = 0.19; Dopant acc. to Ex. 15 y = 0.32

Example 52 Production of OLEDs Comprising the Hole-Transport MaterialAccording to Example 16

The results for various OLEDs are presented in Examples 53 and 54 below.The basic structure and the materials used (apart from the emittinglayer) are identical in the examples for better comparability. OLEDshaving the following structure are produced analogously to theabove-mentioned general process:

Hole-injection 20 nm PEDOT (spin-coated from water; from layer (HIL) H.C. Starck, Goslar, Germany; poly(3,4- ethylenedioxy-2,5-thiophene))Hole-transport 30 nm layer of the hole-transport material layer (HTL)according to Example 16 OR: as comparative example 30 nm layer ofN,N,N′,N′-tetraphenyl-[1,1′-biphenyl]-4,4′- diamine (abbreviated to TAD;purchased from SynTec) Hole-transport 30 nm NPB(N-naphthyl-N-phenyl-4,4′- layer (HTL) diaminobiphenyl) Emission 30 nmlayer of the host material according to layer (EML) Example 8 (seetable), doped with 5% of dopant according to Example 14 Electron 20 nmAlQ₃ (purchased from SynTec, tris- conductor (ETC)(quinolinato)aluminium(III)) Cathode 1 nm LiF, 150 nm Al on top

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), are determined for this purpose.

Table 3 shows the results for two OLEDs (Examples 53 and 54). As can beseen from the examples in Table 3, OLEDs comprising the hole-transportmaterial according to Example 16 according to the invention exhibitsignificantly improved efficiencies at the same time as comparablecolour coordinates and improved lifetimes.

TABLE 3 Max. Voltage efficiency (V) at Example HTL (cd/A) 1000 cd/m² CIEExample 53 TAD 9.0 5.6 x = 0.19; (comparison) y = 0.33 Example 54 HTLacc. to Ex. 16 10.8 4.7 x = 0.18; y = 0.32

Example 55 Production of OLEDs Comprising Matrix Materials According toExamples 17, 18 and 19 and Emitters According to Examples 22, 23 and 24

OLEDs are produced by a general process in accordance with WO 04/93207,which is adapted in individual cases to the particular circumstances(for example layer-thickness variation in order to achieve optimumefficiency or colour).

The results for various OLEDs are compared here. The basic structure,such as the materials used, degree of doping and their layerthicknesses, is identical in the example experiments for bettercomparability. Only the host material in the emitter layer is exchanged,and the examples are carried out with different triplet emitters.

The first example describes a comparison standard in accordance with theprior art in which the emitter layer consists of the matrix materialCBP.

Furthermore, OLEDs comprising an emitter layer consisting of the matrixmaterials according to Examples 17, 18 and 19 according to the inventionare described.

Green- and red-emitting OLEDs having the following structure areproduced analogously to the above-mentioned general process:

PEDOT 60 nm (spin-coated from water; purchased from H. C. Starck; poly[3,4-ethylenedioxy-2,5- thiophene]) NaphDATA 20 nm (vapour-deposited;NaphDATA pur- chased from SynTec; 4,4′,4″-tris(N-1-naphthyl-N-phenylamino)triphenylamine S-TAD 20 nm (vapour-deposited;S-TAD prepared in accordance with WO99/12888; 2,2′,7,7′-tetrakis(diphenylamino)spirobifluorene) Emitter 20 nm of the matrixmaterial according to layer: Example 17, 18 or 19 in each case dopedwith 10% of E1 (synthe- sised in accordance with WO 04/085449) or E2(synthesised in accordance with US 2003/0068526) OR: 20 nm of the matrixmaterial according to Example 17, 18 or 19 in each case doped with 10%of the emitter in accordance with Example 22, 23 or 24 OR: ascomparative example 20 nm CBP (vapour- deposited; CBP purchased fromALDRICH and purified further, finally sublimed twice;4,4′-bis(N-carbazolyl)biphenyl) (comparison standard), doped with 10% ofE1 (synthe- sised in accordance with WO 04/085449) or E2 (synthesised inaccordance with US 2003/0068526) Bathocuproin (BCP) 10 nm(vapour-deposited; BCP purchased from ABCR, used as supplied;2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline); not used in allexamples AlQ₃ 10 nm (vapour-deposited; AlQ₃ purchased from SynTec;tris(quinolinolato)alumin- ium(III)), not used in all examples Ba/Al 3nm Ba, 150 nm Al on top as cathode

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), and the lifetime are determined for this purpose.The lifetime is defined as the time after which the initial brightnessof 1000 cd/m² has dropped to half. For an overview, the triplet emittersused and the host materials used are shown below:

TABLE 4 Max. efficiency Max. power effi- Lifetime (h) at Experiment EMLHBL ETL (cd/A) ciency (lm/W) x, y (CIE) 1000 cd/cm² Example 56 CBP BCPAlQ₃ 25.0 12.2 0.33, 0.61 400 (comparison) E1 (10 nm) (10 nm) Example 57Matrix acc. to Ex. 17 BCP AlQ₃ 32.2 26.7 0.32, 0.60 1050 E1 (10 nm) (10nm) Example 58 Matrix acc. to Ex. 18 BCP AlQ₃ 43.0 36.5 0.32, 0.60 1200E1 (10 nm) (10 nm) Example 59 Matrix acc. to Ex. 19 BCP AlQ₃ 33.9 17.40.31, 0.61 650 E1 (10 nm) (10 nm) Example 60 CBP BCP AlQ₃ 20.9 17.20.31, 0.63 900 (Comparison) Emitter acc. to Ex. 22 (10 nm) (10 nm)Example 61 Matrix acc. to Ex. 17 BCP AlQ₃ 34.8 28.8 0.30, 0.62 2200Emitter acc. to Ex. 22 (10 nm) (10 nm) Example 62 Matrix acc. to Ex. 18BCP AlQ₃ 47.2 36.8 0.30, 0.62 2600 Emitter acc. to Ex. 22 (10 nm) (10nm) Example 63 Matrix acc. to Ex. 19 BCP AlQ₃ 35.0 19.1 0.30, 0.61 1750Emitter acc. to Ex. 22 (10 nm) (10 nm) Example 64 Matrix acc. to Ex. 1742.0 34.6 0.31, 0.62 2000 Emitter acc. to Ex. 22 Example 65 Matrix acc.to Ex. 18 56.4 46.8 0.31, 0.62 2100 Emitter acc. to Ex. 22 Example 66Matrix acc. to Ex. 18 59.2 51.9 0.30, 0.61 1550 Emitter acc. to Ex. 22Example 67 Matrix acc. to Ex. 18 45.2 33.2 0.38, 0.52 1550 Emitter acc.to Ex. 23 Example 68 CBP 6.5 4.8 0.68, 0.32 5000 (Comparison) E2(extrapolated) Example 69 Matrix acc. to Ex. 17 7.7 6.7 0.69, 0.31 25000E2 (extrapolated) Example 70 Matrix acc. to Ex. 18 8.1 7.6 0.68, 0.3227000 E2 (extrapolated) Exampie 71 Matrix acc. to Ex. 19 7.2 5.4 0.68,0.32 8000 E2 (extrapolated) Example 72 CBP 13.4 9.0 0.66, 0.34 11000Emitter acc. to Ex. 24 (extrapolated) Example 73 Matrix acc. to Ex. 1714.3 11.5 0.67, 0.33 32000 Emitter acc. to Ex. 24 (extrapolated) Example74 Matrix acc. to Ex. 18 14.7 12.2 0.66, 0.34 27000 Emitter acc. to Ex.24 (extrapolated) Example 75 Matrix acc. to Ex. 19 14.1 10.1 0.66, 0.3415000 Emitter acc. to Ex. 24 (extrapolated)Electroluminescence Spectra:

The OLEDs, both from the comparative examples and also the OLEDscomprising the matrices and emitters according to the invention, exhibitcomparable colour coordinates, where the emitters according to Examples22, 23 and 24 according to the invention, which carry4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl groups, have somewhathypsochromically shifted emission.

Efficiency:

OLEDs produced using the matrix materials according to Example 17, 18 or19 according to the invention and comprising the emitters according toExamples 22, 23 and 24 exhibit both significantly better photometricefficiency and also better power efficiencies compared with the matrixmaterial in accordance with the prior art. This applies, in particular,to the power efficiency, which is crucial from a technical point ofview, due to the lower operating voltages on use of the matrix materialsaccording to the invention.

Lifetime:

The lifetime achieved on use of the matrix materials 17, 18 and 19according to the invention and emitters 22, 23 and 24 considerablyexceeds that Of the comparative examples comprising the matrix materialCBP.

Layer Simplification:

As can be seen from Examples 64, 65 and 66, it is possible using thematrix materials according to the invention to produce OLEDs whichcomprise neither a hole-blocking layer nor an electron-conductor layerwithout thereby impairing the overall electro-optical property profile.This is a considerable advantage from a production point of view.

Thermal Stability:

The emitters according to Examples 22, 23 and 24 have significantlyhigher thermal stability compared with the compounds which arestructural analogous, but are not substituted by boronic acid estergroups. This improved stability is of crucial importance, in particularon industrial use, since dopants in industrial use must have lifetimesof from several days to weeks at high temperatures.

Example 76 Production of OLEDs Comprising the Electron-TransportMaterials According to Examples 17, 18 and 19

OLEDs are produced by a general process in accordance with WO 04/058911,which is adapted in individual cases to the particular circumstances(for example layer-thickness variation in order to achieve optimumefficiency or colour).

The results for various OLEDs are presented in Examples 77 to 79 below.The basic structure and the materials used (apart from theelectron-trans-port layer) are identical in the examples for bettercomparability. OLEDs having the following structure are producedanalogously to the above-mentioned general process:

Hole-injection 20 nm PEDOT (spin-coated from water; from layer (HIL) H.C. Starck, Goslar, Germany; poly(3,4- ethylenedioxy-2,5-thiophene))Hole-transport 30 nm 4,4′,4″-tris(N-1-naphthyl-N-phenyl- layer (HTL)amino)triphenylamine (abbreviated to NaphDATA, purchased from SynTec)Hole-transport 30 nm NPB (N-naphthyl-N-phenyl-4,4′- layer (HTL)diaminobiphenyl) Emission 30 nm doped layer of 9,10-bis(1-naphthyl-layer (EML) anthracene) as host material (abbreviated to H), doped with5% of tris[4-(2,2-diphenyl- vinyl)phenyl]amine as dopant (abbreviated toD1), vapour-deposited Electron 20 nm of the electron conductor accordingto conductor (ETC) Example 17 or 18 OR: as comparative example 20 nmAlQ₃ (purchased from SynTec, tris(quinolinato)-aluminium(III)) Cathode 1nm LiF, 150 nm Al on top

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), are determined for this purpose.

Table 5 shows the results for some OLEDs (Examples 79 and 80) in whichthe electron-transport layer (ETL) consists of the compounds 17 or 18according to the invention. The comparative material used in thecomparative example is AlQ₃ in accordance with the prior art.

As can be seen from Examples 77 to 79 in Table 5, OLED devicescomprising the electron-transport materials according to Examples 17 and18 according to the invention exhibit a significantly lower operatingvoltage at 1000 cd/m², which is evident from better power efficiencies.

TABLE 5 Max. Voltage efficiency (V) at Example ETL (cd/A) 1000 cd/m² CIEExample 77 AlQ₃ 7.9 6.6 x = 0.17; (comparison) y = 0.31 Example 78 ETLacc. to Ex. 17 8.0 5.1 x = 0.16; y = 0.31 Example 79 ETL acc. to Ex. 188.0 5.0 x = 0.16; y = 0.31

Example 80 Production of OLEDs Comprising the Emitter MaterialsAccording to Examples 20 and 21

OLEDs are produced by a general process in accordance with WO 04/058911,which is adapted in individual cases to the particular circumstances(for example layer-thickness variation in order to achieve optimumefficiency or colour).

The results for various OLEDs are presented in Examples 81 and 82 below.The basic structure and the materials used (apart from theelectron-transport layer) are identical in the examples for bettercomparability. OLEDs having the following structure are producedanalogously to the above-mentioned general process:

Hole-injection 20 nm PEDOT (spin-coated from water; from layer (HIL) H.C. Starck, Goslar, Germany; poly(3,4- ethylenedioxy-2,5-thiophene))Hole-transport 30 nm 4,4^(′),4″-tris(N-1-naphthyl-N-phenyl- layer (HTL)amino)triphenylamine (abbreviated to NaphDATA, purchased from SynTec)Hole-transport 30 nm NPB (N-naphthyl-N-phenyl-4,4′- layer (HTL)diaminobiphenyl) Emission 30 nm doped layer of 9,10-bis(1-naphthyl-layer (EML) anthracene) as host material (abbreviated to H), doped with5% of the emitter materials according to Example 20 or 21 Electron 20 nmAlQ₃ (purchased from SynTec, tris- conductor (ETC)(quinolinato)aluminium(III)) Cathode 1 nm LiF, 150 nm Al on top

These OLEDs are characterised by standard methods; theelectroluminescence spectra, the efficiency (measured in cd/A), thepower efficiency (measured in lm/W) as a function of the brightness,calculated from current/voltage/brightness characteristic lines (IULcharacteristic lines), are determined for this purpose.

Table 6 shows the results for some OLEDs (Examples 81 and 82) in whichthe emitter materials consist of compounds 20 and 21 according to theinvention.

As can be seen from Examples 81 and 82 in Table 6, OLED devicescomprising the emitter materials according to Examples 20 and 21according to the invention exhibit efficient green emission.

TABLE 6 Max. Voltage efficiency (V) at Example EML (cd/A) 1000 cd/m² CIEExample 81 Emitter acc. 21.0 5.1 x = 0.27; to Ex. 20 y = 0.62 Example 82Emitter acc. 18.2 5.0 x = 0.24; to Ex. 21 y = 0.58

Example 83 Sublimation Temperatures

In Table 7 below, the sublimation temperatures (at a pressure of 1×10⁻⁵mbar) of some compounds which are described in the preceding examplesare compared with the sublimation temperatures of compounds which havethe same basic structure, but are not substituted by boronic acidesters. It can be seen from the examples given that the sublimationtemperature of the corresponding boronic esters is in all cases lowerthan that of the unsubstituted compounds. This is a considerableindustrial advantage since temperature-sensitive parts of thevapour-deposition apparatus, such as, for example, shadow masks, arethus only heated to a smaller extent.

It is furthermore evident that some of the compounds which, asunsubstituted compound, exhibit decomposition during sublimation can besublimed without decomposition if they are substituted by boronic acidester groups. This is a considerable industrial advantage.

TABLE 7 Compound T_(sublimation) Comparison T_(sublimation) from Example6 270° C. stable

360° C. stable from Example 7 290° C. stable

360° C. stable from Example 14 300° C. stable

315° C. stable from Example 17 265° C. stable

290° C. stable from Example 18 310° C. stable

385° C. stable from Example 22 295° C. stable

340° C. little decom- position from Example 24 340° C. stable

385° C. strong decom- position

The invention claimed is:
 1. An organic electronic device comprising atleast one organic layer which comprises at least one aromatic borinicacid derivative, wherein the boron atom of said at least one aromaticborinic acid derivative is trisubstituted and the said at least onearomatic borinic acid derivative is a cyclic boronic acid anhydride; acyclic boronic acid imide; a boronic acid ester; a thioboronic acidester; a boronic acid amide; a boronic acid amidoester; a boronic acidnitride; or an oligomeric or polymeric boronic acid anhydride, boronicacid imide, boronic acid ester, or thioboronic acid ester.
 2. Theorganic electronic device of claim 1, wherein said at least one aromaticborinic acid derivative forms glass-like films having a glass transitiontemperature T_(g) of above 70° C.
 3. The organic electronic device ofclaim 1, wherein said at least one aromatic borinic acid derivative hasa molecular weight of at least 250 g/mol.
 4. The organic electronicdevice of claim 1, wherein said organic electronic device is selectedfrom the group consisting of organic or polymeric light-emitting diodes,organic field-effect transistors, organic thin-film transistors, organiclight-emitting transistors, organic integrated circuits, organic solarcells, organic field-quench devices, organic light-emitting cells,organic photoreceptors, and organic laser diodes.
 5. The organicelectronic device of claim 1, wherein said organic electronic devicecomprises anode, cathode and at least one emission layer which exhibitsfluorescence or phosphorescence.
 6. The organic electronic device ofclaim 5, further comprising at least one layer selected fromhole-injection layer, hole-transport layer, hole-blocking layer,electron-transport layer, and/or electron-injection layer.
 7. Theorganic electronic device of claim 1, wherein said at least one aromaticborinic acid derivative is employed in an emission layer in combinationwith a fluorescent or phosphorescent dopant.
 8. The organic electronicdevice of claim 7, wherein said fluorescent dopant is selected from theclass of monostyrylamines, distyrylamines, tristyrylamines,tetrastyrylamines, and arylamines.
 9. The organic electronic device ofclaim 7, wherein said phosphorescent dopant is selected from the classof metal complexes containing at least one element having an atomicnumber of greater than 20 and less than
 84. 10. The organic electronicdevice of claim 1, wherein said at least one aromatic borinic acidderivative is employed as electron-transport material as the puresubstance or in a mixture in an electron-transport layer and/or in thatsaid at least one aromatic boronic acid or borinic acid derivative isemployed as hole-blocking material as the pure substance or in a mixturein a hole-blocking layer.
 11. The organic electronic device of claim 1,wherein said at least one aromatic borinic acid derivative is employedas hole-transport material as the pure substance or in a mixture in ahole-transport layer or in a hole-injection layer in said organicelectronic device.
 12. The organic electronic device of claim 1, whereinsaid organic electronic device is a fluorescent or phosphorescentorganic electroluminescent device and wherein said at least one aromaticboronic acid or borinic acid derivative is employed as fluorescent orphosphorescent dopant in an emission layer in said fluorescent orphosphorescent organic electroluminescent device.
 13. The organicelectronic device of claim 1, wherein said at least one aromatic borinicacid derivative comprises at least one sub-structure of formula (1)Ar—B¹-E  Formula (1) wherein B¹ is, on each occurrence, a boron atomwhich is trisubstituted; Ar is, identically or differently on eachoccurrence, an aromatic or heteroaromatic ring system having 5 to 40aromatic ring atoms optionally substituted by one or more R¹; E is,identically or differently on each occurrence, an oxygen, sulfur, ornitrogen atom, to which a further substituent other than hydrogen isbonded in the case of oxygen or sulfur and to which two furthersubstituents, at least one of which is a substituent other thanhydrogen, are bonded in the case of nitrogen; R¹ is, identically ordifferently on each occurrence, F, Cl, Br, I, CN, a straight-chainalkyl, alkoxy, or thioalkoxy chain having up to 40 C atoms optionallysubstituted by R³, or a branched or cyclic alkyl, alkoxy, or thioalkoxychain having 3 to 40 C atoms, optionally substituted by R³, wherein oneor more non-adjacent C atoms of said straight-chain, branched, or cyclicalkyl, alkoxy, or thioalkoxy chain is optionally replaced by N—R³, O, S,CO, O—CO—O, CO—O, —CR³═CR³—, or —C≡C— and wherein one or more H atoms ofsaid straight-chain, branched, or cyclic alkyl, alkoxy, or thioalkoxychain is optionally replaced by F, Cl, Br, I, CN, or an aromatic orheteroaromatic ring system having 5 to 40 aromatic ring atoms optionallysubstituted by one or more R³, or a combination of two, three or four ofthese systems; and wherein two or more R¹ optionally define a mono- orpolycyclic, aliphatic, or aromatic ring system; R³ is, identically ordifferently on each occurrence, H or an aliphatic or aromatichydrocarbon radical having up to 20 C atoms.
 14. The organic electronicdevice of claim 13, wherein said at least one aromatic borinic acidderivative has a structure of formula (2), formula (3), or formula (4)

wherein B is a boron atom; X is, identically or differently on eachoccurrence, OR², SR², N(R²)₂, NHR², or OBAr₂; Y is, identically ordifferently on each occurrence, X; Z is, identically or differently oneach occurrence, O, S, NR², or NH; L is, identically or differently oneach occurrence, an organic group having 4 to 60 C atoms, to which atleast four groups Z are bonded in such a way that they are able, withthe boron atom, to form a cyclic system; R² is, identically ordifferently on each occurrence, a straight-chain alkyl chain having upto 40 C atoms optionally substituted by R³ or a branched or cyclic alkylchain having 3 to 40 C atoms optionally substituted by R³; wherein oneor more non-adjacent C atoms is optionally replaced by N—R³, O, S, CO,O—CO—O, CO—O, —CR³═CR³—, or —C≡C—, with the proviso that a heteroatom isnot bonded directly to the oxygen or sulfur or nitrogen of the group Xor Y; and wherein one or more H atoms is optionally replaced by F, Cl,Br, I, CN, or an aromatic or heteroaromatic ring system having 5 to 40aromatic ring atoms optionally substituted by one or more radicals R³,or a combination of two, three or four of these systems; and wherein twoor more radicals R² optionally define a mono- or polycyclic, aliphatic,or aromatic ring system; n is, identically or differently on eachoccurrence, 1, 2, 3, 4, 5, or 6; m is, identically or differently oneach occurrence, 1, 2, or 3; q is, identically or differently on eachoccurrence, 2, 3, 4, 5, or
 6. 15. The organic electronic device of claim12, wherein said at least one aromatic borinic acid derivative has astructure of formula (5), formula (6), formula (7), or formula (8)

wherein DCy is, identically or differently on each occurrence, a cyclicgroup which contains at least one donor atom via which the cyclic groupis bonded to the metal and which is optionally substituted with one ormore R¹; and wherein DCy is bonded to CCy via at least one covalentbond; CCy is, identically or differently on each occurrence, a cyclicgroup which contains a carbon atom via which the cyclic group is bondedto the metal and which is optionally substituted with one or more R¹;and wherein CCy is bonded to DCy via at least one covalent bond; A is,identically or differently on each occurrence, a monoanionic ligandwhich chelates in a bidentate manner; z is, identically or differentlyon each occurrence, 0, 1, 2, 3, 4, 5, or 6, with the proviso that atleast one z in each complex is an integer other than 0 and with theproviso that z cannot be an integer greater than the maximum number ofsubstitutable hydrogen atoms on the corresponding ring DCy or CCy. 16.The organic electronic device of claim 15, wherein X in formulae (2),(5), (6), (7), and (8) is OR² or OBAr₂.
 17. The organic electronicdevice of claim 16, wherein X and Y are OR².
 18. The organic electronicdevice of claim 15, wherein X and Y in formulae (2) (5), (6), (7), and(8) are, identically or differently on each occurrence, NHR² or N(R²)₂,wherein Z in formula (3) is O, and wherein Z in formula (4) is O or NR².19. The organic electronic device of claim 13, wherein R¹ is,identically or differently on each occurrence, F, a straight-chain alkylor alkoxy chain having up to 10 C atoms optionally substituted by R³, ora branched alkyl or alkoxy chain having 3 to 10 C atoms optionallysubstituted by R³; wherein one or more non-adjacent C atoms areoptionally replaced by N—R³, O, S, —CR³═CR³—, or —C≡C—; and wherein oneor more H atoms are optionally replaced by F, CN, or an aromatic orheteroaromatic ring system having 5 to 16 aromatic ring atoms optionallysubstituted by one or more radicals R³; or a combination of two or threeof these systems; and wherein two or more radicals R¹ optionally definea mono- or polycyclic, aliphatic, or aromatic ring system.
 20. Theorganic electronic device of claim 13, wherein R² is, identically ordifferently on each occurrence, a straight-chain alkyl chain having upto 10 C atoms optionally substituted by R³ or a branched or cyclic alkylchain having 3 to 10 C atoms optionally substituted by R³; wherein oneor more non-adjacent C atoms is optionally replaced by N—R³, O, S,—CR³═CR³—, or —C≡C—, with the proviso that a heteroatom is not bondeddirectly to the oxygen or sulfur or nitrogen of the group X or Y; andwherein one or more H atoms is optionally replaced by F, or an aromaticor heteroaromatic ring system having 5 to 16 aromatic ring atomsoptionally substituted by one or more R³; or a combination of two orthree of these systems; and wherein two or more radicals R² optionallydefine a further mono- or polycyclic, aliphatic or aromatic ring system.21. The organic electronic device of claim 13, wherein two R², togetherwith B, X and Y, define a ring system.
 22. The organic electronic deviceof claim 13, wherein Ar comprises at least one fused aryl or heteroarylgroup.
 23. The organic electronic device of claim 13, wherein Arcontains only aryl or heteroaryl groups having 5 to 14 aromatic ringatoms.
 24. The organic electronic device of claim 13, wherein Arcomprises at least one triarylamine unit and/or at least one thiophenederivative.
 25. The organic electronic device of claim 13, wherein Arcomprises at least one stilbene unit and/or at least one tolan unit. 26.The organic electronic device of claim 1, further comprising at leastone oligomer, polymer, or dendrimer comprising at least or borinic acidderivative, with the proviso that the boronic acid or borinic acidderivative in said at least one oligomer or polymer is bonded to atleast one point within the main chain and/or side chain and is notbonded to the chain ends of said at least one oligomer or polymer or notonly as end group.
 27. The organic electronic device of claim 26,wherein recurring units of said at least one polymer are selected fromfluorenes, spirobifluorenes, phenylenes, carbazoles, thiophenes,dihydrophenanthrenes, indenofluorenes, phenanthrenes, aromatic ketones,phosphorescent metal complexes, or a plurality of these units.